Datasheet SPD50P03L G (Infineon)
| 制造商 | Infineon |
| 描述 | OptiMOS -P Power-Transistor |
| 页数 / 页 | 9 / 1 — SPD50P03L G. OptiMOS®-P Power-Transistor. Product Summary. Features. … |
| 修订版 | 01_09 |
| 文件格式/大小 | PDF / 395 Kb |
| 文件语言 | 英语 |
SPD50P03L G. OptiMOS®-P Power-Transistor. Product Summary. Features. Type. Package. Marking. Tape and reel information. Lead Free
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SPD50P03L G OptiMOS®-P Power-Transistor Product Summary Features
V DS -30 V • P-Channel R DS(on),max 7 mΩ • Enhancement mode I D -50 A • Logic level • 175°C operating temperature • Avalanche rated • dv /dt rated PG-TO252-5 • High current rating • Pb-free lead-plating, RoHS compliant
Type Package Marking Tape and reel information Lead Free Packing
SPD50P03L G PG-TO252-5 50P03L 1000 pcs / reel Yes Non dry
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D T -50 C=25 °C1) A T -50 C=100 °C1) Pulsed drain current I D,pulse T C=25 °C -200 Avalanche energy, single pulse E AS I D=-50 A, R GS=25 Ω 256 mJ I D=-50 A, V DS=24 V, Reverse diode dv /dt dv /dt di /dt =-200 A/µs, -6 kV/µs T j,max=175 °C Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 150 W Operating and storage temperature T j, T stg -55…+175 °C ESD class HBM 1C Soldering temperature 260 IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.9 page 1 2012-09-13 Document Outline Untitled
V DS -30 V • P-Channel R DS(on),max 7 mΩ • Enhancement mode I D -50 A • Logic level • 175°C operating temperature • Avalanche rated • dv /dt rated PG-TO252-5 • High current rating • Pb-free lead-plating, RoHS compliant
Type Package Marking Tape and reel information Lead Free Packing
SPD50P03L G PG-TO252-5 50P03L 1000 pcs / reel Yes Non dry
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D T -50 C=25 °C1) A T -50 C=100 °C1) Pulsed drain current I D,pulse T C=25 °C -200 Avalanche energy, single pulse E AS I D=-50 A, R GS=25 Ω 256 mJ I D=-50 A, V DS=24 V, Reverse diode dv /dt dv /dt di /dt =-200 A/µs, -6 kV/µs T j,max=175 °C Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 150 W Operating and storage temperature T j, T stg -55…+175 °C ESD class HBM 1C Soldering temperature 260 IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.9 page 1 2012-09-13 Document Outline Untitled