AOTL66608TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20000 V =30V DS I =20A D 8 C 15000 iss )pF) 6 (tsleo 10000 (VanctGS 4 ciVapa Coss C 5000 2 C 0 rss 0 0 50 100 150 200 250 0 10 20 30 40 50 60 Q (nC)V (Volts)gDSFigure 7: Gate-Charge CharacteristicsFigure 8: Capacitance Characteristics 10000.0 2000 T =175°C J(Max) T =25°C C 1000.0 10ms 10ms RDS(ON) 1500 limited 100.0 100ms ))W(ps 1ms rme 1000 10.0 A 10ms ( DC owI DP T =175°C J(Max) 1.0 T =25°C C 500 0.1 0 0.0 0.0001 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 Pulse Width (s)V (Volts)DSFigure 10: Single Pulse Power Rating Junction-to-V> or equal to 6VGSCase (Note F)Figure 9: Maximum Forward BiasedSafe Operating Area (Note F) 10 D=T /T In descending order t on n T =T +P .Zq .Rq D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e J,PK C DM JC JC isenc Rq =0.3°C/W JC anrat 1 T sidseezil R l mar mar 0.1 P oe Single Pulse DM N hTJC q Z Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2019 www.aosmd.com Page 4 of 6