Datasheet IFR3205 (International Rectifier) - 5

制造商International Rectifier
描述HEXFET Power MOSFET
页数 / 页9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11
文件格式/大小PDF / 100 Kb
文件语言英语

Fig 10a. Fig 9. Fig 10b. Fig 11

Fig 10a Fig 9 Fig 10b Fig 11

该数据表的模型线

文件文字版本

IRF3205 RD V 120 DS LIMITED BY PACKAGE VGS V D.U.T. 100 RG R + V - DD 80 10V Pulse Width ≤ Pulse Width 1 µs Duty Factor ≤ Duty Factor 0.1 % 60
Fig 10a.
Switching Time Test Circuit
Fig 10a.
40 I , Drain Current (A) D VDS V 90% 20 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° 10% C VGS V td(on) t t d(on) r t t r d(of d( f of ) t f) f t
Fig 9.
Maximum Drain Current Vs.
Fig 9. Fig 10b.
Switching Time Waveforms Case Temperature 1 D = 0.50 thJC (Z ) 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) Thermal Response 0.01 PDM t1 t2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 11.
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