Datasheet IGT40R070D1 E8220 (Infineon) - 10
| 制造商 | Infineon |
| 描述 | CoolGaN™ 400V enhancement-mode power transistor |
| 页数 / 页 | 16 / 10 — Figure 13. Figure 14. (V). I D. -10. Figure 15. Figure 16. ) (A. (A). I … |
| 修订版 | 02_00 |
| 文件格式/大小 | PDF / 525 Kb |
| 文件语言 | 英语 |
Figure 13. Figure 14. (V). I D. -10. Figure 15. Figure 16. ) (A. (A). I S. VSD (V)
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IGT40R070D1 E8220 400V CoolGaN™ enhancement-mode Power Transistor
Figure 13
Typ. channel reverse characteristics
Figure 14
Typ. channel reverse characteristics
V (V) V (V) DS DS -8 -7 -6 -5 -4 -3 -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 0 0 -1 -1 -2 -2 -3 -3 -4 -4 ) ) -5 (A -5 (A I D I D -6 -6
-5V -4V -3V -2V -1V 0V -5V -4V -3V -2V -1V 0V
-7 -7 -8 -8 -9 -9 -10 -10
VDS=f(ID, VGS); Tj= 25 °C VDS=f(ID, VGS); Tj= 125 °C
Figure 15
Typ. channel reverse characteristics
Figure 16
Typ. channel reverse characteristics 60 60 50 +4V 50 +4V 0V 0V 40 40
) (A
30
(A)
30
I S I S
20 20 10 10 0 0 0 2 4 6 8 0 2 4 6 8 10
V (V) SD VSD (V)
ID=f(VDS, VGS); Tj= 25 °C ID=f(VDS, VGS); Tj= 125 °C Final Data Sheet 10 Rev. 2.0 2018-04-25
Figure 13
Typ. channel reverse characteristics
Figure 14
Typ. channel reverse characteristics
V (V) V (V) DS DS -8 -7 -6 -5 -4 -3 -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 0 0 -1 -1 -2 -2 -3 -3 -4 -4 ) ) -5 (A -5 (A I D I D -6 -6
-5V -4V -3V -2V -1V 0V -5V -4V -3V -2V -1V 0V
-7 -7 -8 -8 -9 -9 -10 -10
VDS=f(ID, VGS); Tj= 25 °C VDS=f(ID, VGS); Tj= 125 °C
Figure 15
Typ. channel reverse characteristics
Figure 16
Typ. channel reverse characteristics 60 60 50 +4V 50 +4V 0V 0V 40 40
) (A
30
(A)
30
I S I S
20 20 10 10 0 0 0 2 4 6 8 0 2 4 6 8 10
V (V) SD VSD (V)
ID=f(VDS, VGS); Tj= 25 °C ID=f(VDS, VGS); Tj= 125 °C Final Data Sheet 10 Rev. 2.0 2018-04-25