Datasheet IGLD60R190D1 (Infineon)

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IGL D60R190D1 IGLD60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Features
Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge
G
Capable of reverse conduction
S SK
Low gate charge, low output charge
S D
Superior commutation ruggedness
D D
Qualified for industrial applications according to JEDEC
D
Standards (JESD47 and JESD22)
1 S S SK G Benefits 8
Improves system efficiency Gate 8 Drain 1,2,3,4 Improves power density Kelvin Source 7 Enables higher operating frequency Source 5,6 System cost reduction savings Reduces EMI
D Applications
SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC,
G SK
high frequency LLC and flyback).
For other applications:
review CoolGaN™ reliability white paper and contact
S
Infineon regional support
Table 1 Key Performance Parameters at Tj = 25 °C Parameter Value Unit
VDS,max 600 V RDS(on),max 190 mΩ QG,typ 3.2 nC ID,pulse 23 A Qoss @ 400 V 16 nC Qrr 0 nC
Table 2 Ordering Information Type / Ordering Code Package Marking Related links
IGLD60R190D1 PG-LSON-8-1 60R190D1 see Appendix A Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0
www.infineon.com
2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History