Datasheet IGLD60R190D1 (Infineon) - 5

制造商Infineon
描述600V CoolGaN™ enhancement-mode Power Transistor
页数 / 页17 / 5 — IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. …
修订版02_00
文件格式/大小PDF / 1.1 Mb
文件语言英语

IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. Electrical characteristics. Table 5. Static characteristics

IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Electrical characteristics Table 5 Static characteristics

该数据表的模型线

文件文字版本

link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13
IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor 3 Electrical characteristics
at Tj = 25 °C, unless specified otherwise
Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
Gate threshold voltage VGS(th) 0.9 1.2 1.6 V IDS = 0.96 mA; VDS = 10 V; Tj =25 °C 0.7 1.0 1.4 IDS = 0.96 mA; VDS = 10 V; Tj =125 °C Drain-Source leakage current - 0.4 40 µA V I DS = 600 V; VGS = 0 V; Tj = 25 °C DSS - 8 - VDS = 600 V; VGS = 0 V; Tj = 150 °C Drain-Source leakage current at I application conditions1 DSSapp - 23 - μA VDS = 400 V; VGS = 0 V; Tj = 125 °C Gate-Source leakage current -1 - - mA V I DS = 0 V; VGS = -10 V; Tj = 25 °C GSS -1 - - VDS = 0 V; VGS = -10 V; Tj = 125 °C Drain-Source on-state resistance - 0.14 0.19 Ω I R G = 9.6 mA; ID = 5 A; Tj = 25 °C DS(on) - 0.26 - IG = 9.6 mA; ID = 5 A; Tj = 150 °C Gate resistance RG,int - 0.27 - Ω LCR impedance measurement; f = fres ; open drain;
Table 6 Dynamic characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
V Input capacitance C GS = 0 V; VDS = 400 V; iss - 157 - pF f = 1 MHz V Output capacitance C GS = 0 V; VDS = 400 V; oss - 28 - pF f = 1 MHz Reverse Transfer capacitance Crss - 0.15 - V pF GS = 0 V; VDS = 400 V; f = 1 MHz Effective output capacitance, C energy related 2 o(er) - 32.5 - pF VDS = 0 to 400 V Effective output capacitance, V C GS = 0 V; VDS = 0 to 400 V; time related 3 o(tr) - 40 - pF Id = const Output charge Qoss - 16 - nC VDS = 0 to 400 V Turn- on delay time td(on) - 11 - ns see Figure 23 Turn- off delay time td(off) - 12 - ns see Figure 23 Rise time tr - 5 - ns see Figure 23 Fall time tf - 12 - ns see Figure 23 1 Parameter represents end of use leakage in applications 2 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V 3 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V Final Data Sheet 5 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History