Datasheet IGLD60R190D1 (Infineon) - 10
制造商 | Infineon |
描述 | 600V CoolGaN™ enhancement-mode Power Transistor |
页数 / 页 | 17 / 10 — IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. Figure … |
修订版 | 02_00 |
文件格式/大小 | PDF / 1.1 Mb |
文件语言 | 英语 |
IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. Figure 13. Typ. transfer characteristics. Figure 14. I D. I G. (V)
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文件文字版本
IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Figure 13 Typ. transfer characteristics Figure 14 Typ. transfer characteristics
30 20 30 20 25 25 15 15 20 20
) ) ) ) A A (A
15 10
(A
15 10
(m (m I D I D I G I G
10 10 5 5 5 5 0 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5
V (V) V (V) GS GS
ID, IG =f(VGS); VDS = 8 V; Tj = 25 °C ID, IG =f(VGS); VDS = 8 V ; Tj = 125 °C
Figure 15 Typ. channel reverse characteristics Figure 16 Typ. channel reverse characteristics V (V) V (V) DS DS -10 -8 -6 -4 -2 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 0 -1 -1 -2 -2 -3 -3 -4 -4 ) ) -5 (A -5 (A I D I D -6 -6
-5V -4V -2V V -5V -4V -3V -2V -1V 0V V -3V -1V 0V GS GS
-7 -7 -8 -8 -9 -9 -10 -10
VDS=f(ID, VGS); Tj = 25 °C VDS=f(ID, VGS); Tj = 125 °C Final Data Sheet 10 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History