Datasheet BCV61 (Infineon) - 2

制造商Infineon
描述NPN Silicon Double Transistor
页数 / 页7 / 2 — BCV61. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. …
修订版01_01
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BCV61. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. DC Characteristics of T1

BCV61 Electrical Characteristics Parameter Symbol Values Unit min typ max DC Characteristics of T1

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BCV61 Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics of T1
Collector-emitter breakdown voltage V(BR)CEO 30 - - V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 30 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 6 - - IE = 10 µA, IC = 0 Collector cutoff current ICBO - - 15 nA VCB = 30 V, IE = 0 Collector cutoff current ICBO - - 5 µA VCB = 30 V, IE = 0 , TA = 150 °C DC current gain1) hFE 100 - - - IC = 0.1 mA, VCE = 5 V DC current gain1) hFE IC = 2 mA, VCE = 5 V, BCV61B 200 290 450 IC = 2 mA, VCE = 5 V, BCV61C 420 520 800 Collector-emitter saturation voltage1) VCEsat mV IC = 10 mA, IB = 0.5 mA - 90 250 IC = 100 mA, IB = 5 mA - 200 600 Base-emitter saturation voltage1) VBEsat IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - Base-emitter voltage1) VBE(ON) IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V - - 770 1Puls test: t ≤ 300 µs, D = 2% 2 2011-10-13