Datasheet BC856, BC857, BC858, BC859, BC860 (ON Semiconductor) - 4

-50
1000 IB = -400µA
IB = -350µA -40 VCE = -5V IB = -300µA -35 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 IB = -250µA -30 IB = -200µA -25 IB = -150µA -20 IB = -100µA -15
-10 IB = -50µA -5
-0
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 100 10
-0.1 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 Figure 2. DC current Gain -10 -100 -1 IC[mA], COLLECTOR CURRENT IC = 10 IB VBE(sat) -0.1 VCE(sat) -0.01
-0.1 VCE = -5V -10 -1 -0.1
-1 -10 -100 -0.2 -0.4 IC[mA], COLLECTOR CURRENT fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz IE=0 1
-10 -100 -1.0 -1.2 1000 f=1MHz IE=0 100 10
-1 -10 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 3
BC856-BC860 Rev. B -0.8 Figure 4. Base-Emitter On Voltage 10 -1 -0.6 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE -10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 www.fairchildsemi.com BC856-BC860 PNP Epitaxial Silicon Transistor Typical Performance Characteristics