Datasheet STW88N65M5, STWA88N65M5 (STMicroelectronics) - 8

Electrical characteristics STW88N65M5, STWA88N65M5 Figure 14. Switching losses vs gate resistance (1)
AM11171v1 E (μJ) VDD=400V Eon VGS=10V TJ=25°C 3000 ID=56A 2000 Eoff 1000 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/16 DocID022522 Rev 5 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On /off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package mechanical data Figure 21. TO-247 drawing Table 8. TO-247 mechanical data Figure 22. TO-247 long leads drawing Table 9. TO-247 long leads mechanical data 5 Revision history Table 10. Document revision history