Datasheet STW88N65M5-4 (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh M5 Power MOSFET in a TO247-4 package |
| 页数 / 页 | 13 / 3 — STW88N65M5-4. Electrical ratings. 1 Electrical. ratings. Table 2. … |
| 文件格式/大小 | PDF / 723 Kb |
| 文件语言 | 英语 |
STW88N65M5-4. Electrical ratings. 1 Electrical. ratings. Table 2. Absolute maximum ratings. Symbol. Parameter. Value. Unit
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STW88N65M5-4 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit
VGS Gate- source voltage ±25 V Drain current (continuous) at TC = 25 °C 84 ID A Drain current (continuous) at TC = 100 °C 50.5 I (1) DM Drain current (pulsed) 336 A PTOT Total dissipation at TC = 25 °C 450 W Max. current during repetitive or single pulse IAR 15 A avalanche (pulse width limited by Tjmax) Single pulse avalanche energy EAS 2000 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 1. Pulse width limited by safe operating area. 2. ISD ≤ 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V.
Table 3. Thermal data Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max. 0.28 °C/W Rthj-amb Thermal resistance junction-ambient max. 50 Doc ID 027754 Rev 1 3/13 13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history
VGS Gate- source voltage ±25 V Drain current (continuous) at TC = 25 °C 84 ID A Drain current (continuous) at TC = 100 °C 50.5 I (1) DM Drain current (pulsed) 336 A PTOT Total dissipation at TC = 25 °C 450 W Max. current during repetitive or single pulse IAR 15 A avalanche (pulse width limited by Tjmax) Single pulse avalanche energy EAS 2000 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 1. Pulse width limited by safe operating area. 2. ISD ≤ 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V.
Table 3. Thermal data Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max. 0.28 °C/W Rthj-amb Thermal resistance junction-ambient max. 50 Doc ID 027754 Rev 1 3/13 13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history