Datasheet DSEE29-12CC (IXYS) - 5

DSEE29-12CC Fast Diode
70 3000 50 A T = 100°C 60 VJ 2500 V = 300 V 40 R T = 150°C VJ I = 60 A 50 F 2000
I
I = 30 A F
F Q
I = 60 A 30 40 F
r
I = 15 A
I
F T = 100°C VJ 1500 I = 30 A
RM
F [A] 30 [nC] I = 15 A F 20 [A] 1000 20 T = 100°C VJ 10 500 10 V = 300 V R T = 25°C VJ 0 0 0 0.0 0.5 1.0 1.5 2.0 0 1 0 1 0 0 0 0 200 400 600 800 1000
V
[V]
-di /dt
[A/µs]
-di /dt
[A/µs]
F F F
Fig. 1 Forward current I vs. V F F Fig. 2 Typ. reverse recovery charge Fig. 3 Typ. peak reverse current Q versus -di /dt I versus -di /dt r F RM F 2.0 130 20 1.2 T = 100°C VJ T = 100°C VJ V = 300 V 120 R I = 30 A F 1.5 I = 60 A F 15 0.9 110 I = 30 A F I = 15 A
t t V
F
fr rr FR K
1.0 100 10 0.6
f
[ns] [µs] [V] 90 IRM 0.5 5 0.3 V t 80 FR rr Qr 0.0 70 0 0.0 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000
T
[°C]
-di /dt
[A/µs]
-di /dt
[A/µs]
VJ F F
Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage VFR Q , I versus T r RM VJ t versus -di /dt rr F and typ. forward recovery time t versus di /dt fr F 1 Constants for Z calculation: thJC
ZthJC
i R (K/W) t (s) thi i 0.1 1 0.038 0.00024 [K/W] 2 0.07 0.0036 3 0.245 0.0235 4 0.198 0.1421 5 0.35 0.25 DSEE 29-12CC 0.01 0.001 0.01 0.1 1 10 t
t
[s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b © 2016 IXYS all rights reserved