Datasheet IPB230N06L3 G, IPP230N06L3 G (Infineon)
| 制造商 | Infineon |
| 描述 | OptiMOS Power Transistors |
| 页数 / 页 | 10 / 1 — IPB230N06L3 G IPP230N06L3 G. OptiMOS™3 Power-Transistor. Product Summary. … |
| 文件格式/大小 | PDF / 305 Kb |
| 文件语言 | 英语 |
IPB230N06L3 G IPP230N06L3 G. OptiMOS™3 Power-Transistor. Product Summary. Features. Type. Package. Marking. Maximum ratings,. Parameter
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文件文字版本
Type
IPB230N06L3 G IPP230N06L3 G OptiMOS™3 Power-Transistor Product Summary Features
V DS 60 V • Ideal for high frequency switching and sync. rec. R DS(on),max 23 mΩ • Optimized technology for DC/DC converters I D 30 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Type
IPB230N06L3 G IPP230N06L3 G
Package
PG-TO263-3 PG-TO220-3
Marking
230N06L 230N06L
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 °C2) 30 A T C=100 °C 21 Pulsed drain current2) I D,pulse T C=25 °C 120 Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω 13 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 36 W Operating and storage temperature T j, T stg -55 ... 175 °C 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.2 page 1 2010-01-22
IPB230N06L3 G IPP230N06L3 G OptiMOS™3 Power-Transistor Product Summary Features
V DS 60 V • Ideal for high frequency switching and sync. rec. R DS(on),max 23 mΩ • Optimized technology for DC/DC converters I D 30 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Type
IPB230N06L3 G IPP230N06L3 G
Package
PG-TO263-3 PG-TO220-3
Marking
230N06L 230N06L
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 °C2) 30 A T C=100 °C 21 Pulsed drain current2) I D,pulse T C=25 °C 120 Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω 13 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 36 W Operating and storage temperature T j, T stg -55 ... 175 °C 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.2 page 1 2010-01-22