Datasheet MTD20P06HDL (Motorola) - 5
| 制造商 | Motorola |
| 描述 | P–Channel Enhancement–Mode Silicon Gate |
| 页数 / 页 | 12 / 5 — Figure 8. Gate–To–Source and Drain–To–Source. Figure 9. Resistive … |
| 文件格式/大小 | PDF / 318 Kb |
| 文件语言 | 英语 |
Figure 8. Gate–To–Source and Drain–To–Source. Figure 9. Resistive Switching Time. Voltage versus Total Charge
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MTD20P06HDL 6 50 V 1000 DS TS) QT VDD = 30 V 45 , DRAIN–T I 5 D = 15 A V 40 GS = 5.0 V TAGE (VOL TJ = 25°C tr 4 35 O–SOURCE VOL 100 tf V V 30 DS GS 3 25 td(off) Q1 Q2 TIME (ns) t 20 I t, d(on) O–SOURCE VOL D = 15 A 2 T 15 T 10 J = 25°C AGE (VOL TE–T 10 , GA 1 Q3 5 GS TS) V 0 0 1 0 4 8 12 16 20 24 1 10 100 QG, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (Ohms)
Figure 8. Gate–To–Source and Drain–To–Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode di/dts. The diode’s negative di/dt during ta is directly con- are very important in systems using it as a freewheeling or trolled by the device clearing the stored charge. However, commutating diode. Of particular interest are the reverse re- the positive di/dt during tb is an uncontrollable diode charac- covery characteristics which play a major role in determining teristic and is usually the culprit that induces current ringing. switching losses, radiated noise, EMI and RFI. Therefore, when comparing diodes, the ratio of tb/ta serves System switching losses are largely due to the nature of as a good indicator of recovery abruptness and thus gives a the body diode itself. The body diode is a minority carrier de- comparative estimate of probable noise generated. A ratio of vice, therefore it has a finite reverse recovery time, trr, due to 1 is considered ideal and values less than 0.5 are considered the storage of minority carrier charge, QRR, as shown in the snappy. typical reverse recovery wave form of Figure 12. It is this Compared to Motorola standard cell density low voltage stored charge that, when cleared from the diode, passes MOSFETs, high cell density MOSFET diodes are faster through a potential and defines an energy loss. Obviously, (shorter t repeatedly forcing the diode through reverse recovery further rr), have less stored charge and a softer reverse re- increases switching losses. Therefore, one would like a covery characteristic. The softness advantage of the high diode with short t cell density diode means they can be forced through reverse rr and low QRR specifications to minimize these losses. recovery at a higher di/dt than a standard cell MOSFET The abruptness of diode reverse recovery effects the diode without increasing the current ringing or the noise gen- amount of radiated noise, voltage spikes, and current ring- erated. In addition, power dissipation incurred from switching ing. The mechanisms at work are finite irremovable circuit the diode will be less due to the shorter recovery time and parasitic inductances and capacitances acted upon by high lower switching losses. 15 VGS = 0 V TJ = 25°C 12 (AMPS) 9 6 , SOURCE CURRENT I S 3 0 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 VSD, SOURCE–TO–DRAIN VOLTAGE (Volts)
Figure 10. Diode Forward Voltage versus Current
Motorola TMOS Power MOSFET Transistor Device Data 5
Figure 8. Gate–To–Source and Drain–To–Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode di/dts. The diode’s negative di/dt during ta is directly con- are very important in systems using it as a freewheeling or trolled by the device clearing the stored charge. However, commutating diode. Of particular interest are the reverse re- the positive di/dt during tb is an uncontrollable diode charac- covery characteristics which play a major role in determining teristic and is usually the culprit that induces current ringing. switching losses, radiated noise, EMI and RFI. Therefore, when comparing diodes, the ratio of tb/ta serves System switching losses are largely due to the nature of as a good indicator of recovery abruptness and thus gives a the body diode itself. The body diode is a minority carrier de- comparative estimate of probable noise generated. A ratio of vice, therefore it has a finite reverse recovery time, trr, due to 1 is considered ideal and values less than 0.5 are considered the storage of minority carrier charge, QRR, as shown in the snappy. typical reverse recovery wave form of Figure 12. It is this Compared to Motorola standard cell density low voltage stored charge that, when cleared from the diode, passes MOSFETs, high cell density MOSFET diodes are faster through a potential and defines an energy loss. Obviously, (shorter t repeatedly forcing the diode through reverse recovery further rr), have less stored charge and a softer reverse re- increases switching losses. Therefore, one would like a covery characteristic. The softness advantage of the high diode with short t cell density diode means they can be forced through reverse rr and low QRR specifications to minimize these losses. recovery at a higher di/dt than a standard cell MOSFET The abruptness of diode reverse recovery effects the diode without increasing the current ringing or the noise gen- amount of radiated noise, voltage spikes, and current ring- erated. In addition, power dissipation incurred from switching ing. The mechanisms at work are finite irremovable circuit the diode will be less due to the shorter recovery time and parasitic inductances and capacitances acted upon by high lower switching losses. 15 VGS = 0 V TJ = 25°C 12 (AMPS) 9 6 , SOURCE CURRENT I S 3 0 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 VSD, SOURCE–TO–DRAIN VOLTAGE (Volts)
Figure 10. Diode Forward Voltage versus Current
Motorola TMOS Power MOSFET Transistor Device Data 5