Datasheet MTD20P06HDL (Motorola) - 7
| 制造商 | Motorola |
| 描述 | P–Channel Enhancement–Mode Silicon Gate |
| 页数 / 页 | 12 / 7 — TYPICAL ELECTRICAL CHARACTERISTICS. Figure 14. Thermal Response. Figure … |
| 文件格式/大小 | PDF / 318 Kb |
| 文件语言 | 英语 |
TYPICAL ELECTRICAL CHARACTERISTICS. Figure 14. Thermal Response. Figure 15. Diode Reverse Recovery Waveform
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MTD20P06HDL
TYPICAL ELECTRICAL CHARACTERISTICS
ANCE 1.0 D = 0.5 RESIST 0.2 0.1 THERMAL P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER 0.02 (NORMALIZED) PULSE TRAIN SHOWN TRANSIENT t 0.01 1 READ TIME AT t1 t2 TJ(pk) – TC = P(pk) RθJC(t) SINGLE PULSE DUTY CYCLE, D = t1/t2 , EFFECTIVE 0.01 r(t) 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 t, TIME (s)
Figure 14. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 15. Diode Reverse Recovery Waveform
Motorola TMOS Power MOSFET Transistor Device Data 7
TYPICAL ELECTRICAL CHARACTERISTICS
ANCE 1.0 D = 0.5 RESIST 0.2 0.1 THERMAL P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER 0.02 (NORMALIZED) PULSE TRAIN SHOWN TRANSIENT t 0.01 1 READ TIME AT t1 t2 TJ(pk) – TC = P(pk) RθJC(t) SINGLE PULSE DUTY CYCLE, D = t1/t2 , EFFECTIVE 0.01 r(t) 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 t, TIME (s)
Figure 14. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 15. Diode Reverse Recovery Waveform
Motorola TMOS Power MOSFET Transistor Device Data 7