Datasheet PAM8904Q (Diodes) - 3

PAM8904Q Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Symbol Characteristics Value Unit
VIN Supply Voltage -0.3 to +5.5 V VI CPM1, CPM2 GND -0.3 to VIN +0.3 V θJA Thermal Resistance (Junction to Ambient) 35 °C/W θJC Thermal Resistance (Junction to Case) 14 °C/W TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -65 to +150 °C
ESD Susceptibility
HBM Human Body Model 8 kV MM Machine Model 600 V CDM Charged Device Model 1 kV Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. (Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.)
Recommended Operating Conditions
(@TA = +25°C, unless otherwise specified.)
Symbol Characteristics Min Max Unit
VIN Supply Voltage 2.3 5.0 V VIH High-Level Input Voltage CPM1, CPM2 1.2 VIN +0.3 V VIL Low-Level Input Voltage CPM1, CPM2 -0.3 +0.4 V TA Operating Free-Air Temperature -40 +105 °C PAM8904Q 3 of 11 November 2016 Document number: DS38977 Rev. 2 - 2
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