Datasheet GAN063-650WSA (Nexperia) - 3
| 制造商 | Nexperia |
| 描述 | 650 V, 50 mΩ Gallium Nitride (GaN) FET |
| 页数 / 页 | 12 / 3 — Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 8. … |
| 修订版 | 27112019 |
| 文件格式/大小 | PDF / 289 Kb |
| 文件语言 | 英语 |
Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 8. Limiting values Table 5. Limiting values. Symbol. Parameter
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Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - 650 V VTDS transient drain to source pulsed; tp = 1 µs; δfactor = 0.01 - 800 V voltage VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 143 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 34.5 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 24.4 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 150 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering - 260 °C temperature
Source-drain diode
IS source current Tmb = 25 °C; VGS = 0 V - 34.5 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 150 A 03aa16 120 aaa-028050 100 ID (A ( ) A D = 1 0 1 % Pder (%) 80 D = 2 0 2 % 80 60 D = 5 0 5 % 40 40 DC 20 0 0 0 50 100 150 200 25 50 75 100 125 150 175 200 Tmb (°C) Tmb (°C) VGS ≥ 10 V; Pulse width ≤ 10 µs
Fig. 2. Drain current as a function of mounting base Fig. 1. Normalized total power dissipation as a temperature function of mounting base temperature
GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 3 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents
Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - 650 V VTDS transient drain to source pulsed; tp = 1 µs; δfactor = 0.01 - 800 V voltage VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 143 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 34.5 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 24.4 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 150 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering - 260 °C temperature
Source-drain diode
IS source current Tmb = 25 °C; VGS = 0 V - 34.5 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 150 A 03aa16 120 aaa-028050 100 ID (A ( ) A D = 1 0 1 % Pder (%) 80 D = 2 0 2 % 80 60 D = 5 0 5 % 40 40 DC 20 0 0 0 50 100 150 200 25 50 75 100 125 150 175 200 Tmb (°C) Tmb (°C) VGS ≥ 10 V; Pulse width ≤ 10 µs
Fig. 2. Drain current as a function of mounting base Fig. 1. Normalized total power dissipation as a temperature function of mounting base temperature
GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 3 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents