Datasheet SiSF20DN (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET |
| 页数 / 页 | 8 / 3 — SiSF20DN. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| 文件格式/大小 | PDF / 213 Kb |
| 文件语言 | 英语 |
SiSF20DN. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
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SiSF20DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 100 10000 V = 10 V thru 5 V GS V = 4 V GS 80 ) 80 ) (A (A 1000 1000 60 rrent 60 u rrent ine ne ne u ne ne ine 1st li 2nd l 2nd li 1st li 40 2nd li ource C 40 2nd l ource C S T = 25 °C 100 - C S 100 - S2 S1 S2 20 V = 3 V GS I 20 I S1 T = -55 °C T = 125 °C C C 0 10 0 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 V - Source-to-Source Voltage (V) V - Gate-to-Source Voltage (V) S1S2 GS
Output Characteristics Transfer Characteristics
Axis Title Note: for one channel only 0.025 10000 1600 10000 Ciss ) 0.020 Ω 1200 V = 4.5 V GS 1000 1000 (pF) 0.015 ne ne ne ne ine ine tance 800 1st li n-Resistance ( 2nd li 1st li 2nd li 2nd l 2nd l 0.010 O apaci - C ) 100 100 n (o V = 10 V GS C - 400 Coss S2 0.005 S1R Crss 0 10 0 10 0 20 40 60 80 100 0 10 20 30 40 50 60 I - Source Current (A) V - Drain-to-Source Voltage (V) S1S2 DS
On-Resistance vs. Source Current and Gate Voltage Capacitance
Note: for one channel only Axis Title 10 10000 2.0 10000 I = 5 A I = 7 A D D ) d) e 1.8 (V 8 liz V = 10 V GS V = 30 V a DS 1.6 ltage o 1000 1000 6 1.4 ne ne ne ine ne ine ource V V = 4.5 V GS V = 15 V V = 24 V DS DS 1st li 2nd li 1st li 2nd l 1.2 2nd li 4 2nd l 100 100 ate-to-S n-Resistance (Norm 1.0 G O - - 2 ) n GS (o 0.8 V S2 S1R 0 10 0.6 10 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
S18-1210-Rev. A, 10-Dec-2018
3
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 100 10000 V = 10 V thru 5 V GS V = 4 V GS 80 ) 80 ) (A (A 1000 1000 60 rrent 60 u rrent ine ne ne u ne ne ine 1st li 2nd l 2nd li 1st li 40 2nd li ource C 40 2nd l ource C S T = 25 °C 100 - C S 100 - S2 S1 S2 20 V = 3 V GS I 20 I S1 T = -55 °C T = 125 °C C C 0 10 0 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 V - Source-to-Source Voltage (V) V - Gate-to-Source Voltage (V) S1S2 GS
Output Characteristics Transfer Characteristics
Axis Title Note: for one channel only 0.025 10000 1600 10000 Ciss ) 0.020 Ω 1200 V = 4.5 V GS 1000 1000 (pF) 0.015 ne ne ne ne ine ine tance 800 1st li n-Resistance ( 2nd li 1st li 2nd li 2nd l 2nd l 0.010 O apaci - C ) 100 100 n (o V = 10 V GS C - 400 Coss S2 0.005 S1R Crss 0 10 0 10 0 20 40 60 80 100 0 10 20 30 40 50 60 I - Source Current (A) V - Drain-to-Source Voltage (V) S1S2 DS
On-Resistance vs. Source Current and Gate Voltage Capacitance
Note: for one channel only Axis Title 10 10000 2.0 10000 I = 5 A I = 7 A D D ) d) e 1.8 (V 8 liz V = 10 V GS V = 30 V a DS 1.6 ltage o 1000 1000 6 1.4 ne ne ne ine ne ine ource V V = 4.5 V GS V = 15 V V = 24 V DS DS 1st li 2nd li 1st li 2nd l 1.2 2nd li 4 2nd l 100 100 ate-to-S n-Resistance (Norm 1.0 G O - - 2 ) n GS (o 0.8 V S2 S1R 0 10 0.6 10 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
S18-1210-Rev. A, 10-Dec-2018
3
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000