Preliminary Datasheet GPI8HIRGIC (GaNPower International) - 2

GaNPower International Inc. WWW. IGANPOWER.COM 230 -3410 LOUGHEED HWY VANCOUVER, BC, V5M 2A4 CANADA
Basic Parameters Test data Paramete Conditions Min Typical Max Unit rs
V 1 BV gs=0V dss Drain-Source breakdown voltage 650 V Id=10uA Static drain-source on resistance, V 2 R gs=6V dson 165 175 300 mΩ TC = 25℃ Id=1.8A 3 Vcc Drive supply voltage 6 10 15 V Turn-off narrow pulse triggering Pulse width 4 Vin1 2.5 5 8 V pulse 50ns-300ns Pulse width 5 Iin1 Turn-off current 0.02 mA 50ns-300ns 6 Ciss1 Input capacitance 0.3 pF 7 Qg1 Input gate charge 6.5 fC Turn-on narrow pulse triggering Pulse width 8 Vin2 2.5 5 8 V pulse 50ns-300ns Pulse width 9 Iin2 Turn-off current 0.02 mA 50ns-300ns 10 Ciss2 Input capacitance 0.3 pF 11 Qg2 Input gate charge 6.5 fC
Switching Performance Test data Paramete Conditions Min Typical Max Unit rs
1 td(on) Turn-on delay time V 15 ns ds=385V 2 tr Vds rise time (turn-off) Id=1.6A 8 ns 3 td(off) Turn-off delay time Vin1/2=5V 10 ns Vdd=6.5V 4 tf Vds Fall time (turn-on) 12 ns Device Characteristics For more information, visit us at: www.iganpower.com, or contact us at sales@iganpower.com