Datasheet BC817DPN (Nexperia)
| 制造商 | Nexperia |
| 描述 | NPN/PNP general purpose transistor |
| 页数 / 页 | 9 / 1 — BC817DPN. NPN/PNP general purpose transistor. 27 November 2019. Product … |
| 修订版 | 27112019 |
| 文件格式/大小 | PDF / 223 Kb |
| 文件语言 | 英语 |
BC817DPN. NPN/PNP general purpose transistor. 27 November 2019. Product data sheet. 1. General description
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BC817DPN NPN/PNP general purpose transistor 27 November 2019 Product data sheet 1. General description
NPN/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.
2. Features and benefits
• Reduces component count • Reduces pick and place costs • AEC-Q101 qualified
3. Applications
• General purpose switching and amplification
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter open base - - 45 V voltage IC collector current - - 500 mA ICM peak collector current single pulse; tp ≤ 1 ms - - 1 A
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
hFE DC current gain VCE = 1 V; IC = 100 mA [1] 160 - 400 [1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 3 C2 collector TR2 TR2 1 2 3 TR1 4 E2 emitter TR2
SC-74; TSOP6 (SOT457)
5 B2 base TR2 E1 B1 C2 6 C1 collector TR1 sym019 Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
BC817DPN NPN/PNP general purpose transistor 27 November 2019 Product data sheet 1. General description
NPN/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.
2. Features and benefits
• Reduces component count • Reduces pick and place costs • AEC-Q101 qualified
3. Applications
• General purpose switching and amplification
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter open base - - 45 V voltage IC collector current - - 500 mA ICM peak collector current single pulse; tp ≤ 1 ms - - 1 A
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
hFE DC current gain VCE = 1 V; IC = 100 mA [1] 160 - 400 [1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 3 C2 collector TR2 TR2 1 2 3 TR1 4 E2 emitter TR2
SC-74; TSOP6 (SOT457)
5 B2 base TR2 E1 B1 C2 6 C1 collector TR1 sym019 Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents