Datasheet ZVN4210G (Diodes) - 4
| 制造商 | Diodes |
| 描述 | SOT223 N-Channel Enhancement Mode Vertical DMOS FET |
| 页数 / 页 | 5 / 4 — ZVN4210G. Package Outline Dimensions. SOT223. Dim. Min. Max. Typ. All … |
| 文件格式/大小 | PDF / 473 Kb |
| 文件语言 | 英语 |
ZVN4210G. Package Outline Dimensions. SOT223. Dim. Min. Max. Typ. All Dimensions in mm. Suggested Pad Layout. Dimensions Value (in mm)
该数据表的模型线
文件文字版本
ZVN4210G Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
N O
D
I
b1 Q
T
C
SOT223 A Dim Min Max Typ M A
1.55 1.65 1.60
R A1
0.010 0.15 0.05
O b
0.60 0.80 0.70 E E1
F b1 T
2.90 3.10 3.00 Gauge
C
0.20 0.30 0.25
N
Plane
IC
0.25
D
6.45 6.55 6.50
U
Seating L
E
3.45 3.55 3.50
ED
Plane
E1
6.90 7.10 7.00
CO
e1 b -10°
e
- - 4.60
NR
0° e
e1
- - 2.30
AP L
0.85 1.05 0.95
V
A A1 7°
Q
0.84 0.94 0.89
DW All Dimensions in mm AE N
7°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1
Dimensions Value (in mm) C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60 C1 Y2
Y1
1.60
Y2
8.00 Y X C Z VN4210G 4 of 5 February 2015 Document Number DS33366 Rev. 3 - 2
www.diodes.com
© Diodes Incorporated
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
N O
D
I
b1 Q
T
C
SOT223 A Dim Min Max Typ M A
1.55 1.65 1.60
R A1
0.010 0.15 0.05
O b
0.60 0.80 0.70 E E1
F b1 T
2.90 3.10 3.00 Gauge
C
0.20 0.30 0.25
N
Plane
IC
0.25
D
6.45 6.55 6.50
U
Seating L
E
3.45 3.55 3.50
ED
Plane
E1
6.90 7.10 7.00
CO
e1 b -10°
e
- - 4.60
NR
0° e
e1
- - 2.30
AP L
0.85 1.05 0.95
V
A A1 7°
Q
0.84 0.94 0.89
DW All Dimensions in mm AE N
7°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1
Dimensions Value (in mm) C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60 C1 Y2
Y1
1.60
Y2
8.00 Y X C Z VN4210G 4 of 5 February 2015 Document Number DS33366 Rev. 3 - 2
www.diodes.com
© Diodes Incorporated