Datasheet FDS6575 (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | P-Channel 2.5V Specified PowerTrench MOSFET |
| 页数 / 页 | 7 / 3 — Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ … |
| 修订版 | A |
| 文件格式/大小 | PDF / 185 Kb |
| 文件语言 | 英语 |
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics. BV DSS. ∆BV DSS. ∆TJ
该数据表的模型线
文件文字版本
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics
BV DSS
∆BV DSS
∆TJ
IDSS Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –16 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA –1.5 V On Characteristics –20 ID = –250 µA, Referenced to 25°C V
–13 mV/°C (Note 2) V GS(th)
∆V GS(th)
∆TJ
RDS(on) Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance V DS = V GS , ID = –250 µA
ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –4.5 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –10 A 57 S V DS = –10 V,
f = 1.0 MHz V GS = 0 V, 4951 pF 884 pF 451 pF –0.4 –0.6
3 V GS = –4.5 V, ID = –10 A
V GS = –2.5 V, ID = –9 A
V GS = –4.5 V, ID =–10A, TJ =125°C 8.5
11
11 mV/°C
13
17
20 mΩ –50 A Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics
td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = –10V,
V GS = –4.5 V, 16 29 ns 9 18 ns Turn–Off Delay Time 196 314 ns tf Turn–Off Fall Time 78 125 ns Qg Total Gate Charge 53 74 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –10 V,
V GS = –4.5 V ID = –1 A,
RGEN = 6 Ω ID = –10 A, 6 nC 12 nC Drain–Source Diode Characteristics and Maximum Ratings
IS
V SD Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V GS = 0 V, IS = –2.1 A
Voltage (Note 2) –0.6 –2.1 A –1.2 V Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper b) 105 °C/W when
mounted on a .04 in2
pad of 2 oz copper c) 125 °C/W when mounted on a
minimum pad. Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6575 Rev F(W) FDS6575 Electrical Characteristics
BV DSS
∆BV DSS
∆TJ
IDSS Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –16 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA –1.5 V On Characteristics –20 ID = –250 µA, Referenced to 25°C V
–13 mV/°C (Note 2) V GS(th)
∆V GS(th)
∆TJ
RDS(on) Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance V DS = V GS , ID = –250 µA
ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –4.5 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –10 A 57 S V DS = –10 V,
f = 1.0 MHz V GS = 0 V, 4951 pF 884 pF 451 pF –0.4 –0.6
3 V GS = –4.5 V, ID = –10 A
V GS = –2.5 V, ID = –9 A
V GS = –4.5 V, ID =–10A, TJ =125°C 8.5
11
11 mV/°C
13
17
20 mΩ –50 A Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics
td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = –10V,
V GS = –4.5 V, 16 29 ns 9 18 ns Turn–Off Delay Time 196 314 ns tf Turn–Off Fall Time 78 125 ns Qg Total Gate Charge 53 74 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –10 V,
V GS = –4.5 V ID = –1 A,
RGEN = 6 Ω ID = –10 A, 6 nC 12 nC Drain–Source Diode Characteristics and Maximum Ratings
IS
V SD Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V GS = 0 V, IS = –2.1 A
Voltage (Note 2) –0.6 –2.1 A –1.2 V Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper b) 105 °C/W when
mounted on a .04 in2
pad of 2 oz copper c) 125 °C/W when mounted on a
minimum pad. Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6575 Rev F(W) FDS6575 Electrical Characteristics