Datasheet IRLHM620PbF (Infineon) - 2
制造商 | Infineon |
描述 | HEXFET Power MOSFET |
页数 / 页 | 9 / 2 — Static @ TJ = 25°C (unless otherwise specified). Parameter Min. Typ. Max. … |
文件格式/大小 | PDF / 542 Kb |
文件语言 | 英语 |
Static @ TJ = 25°C (unless otherwise specified). Parameter Min. Typ. Max. Units. Conditions. Avalanche Characteristics. Parameter Typ
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IRLHM620PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 5.4 ––– mV/°C Reference to 25°C, ID = 1mA ––– 1.5 2.2 VGS = 10V, ID = 20A RDS(on) Static Drain-to-Source On-Resistance ––– 1.8 2.5 m VGS = 4.5V, ID = 20A ––– 2.7 3.5 VGS = 2.5V, ID = 20A VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V VDS = VGS, ID = 50µA VGS(th) Gate Threshold Voltage Coefficient ––– -4.3 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1 V µA DS = 16V, VGS = 0V ––– ––– 150 VDS = 16V,VGS = 0V,TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V nA GS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 12V gfs Forward Transconductance 58 ––– ––– S VDS = 10V, ID = 20A Qg Total Gate Charge ––– 52 78 VDS = 10V Qgs Gate-to-Source Charge ––– 6.3 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 25 ––– ID = 20A (See Fig.17 & 18) RG Gate Resistance ––– 2.6 ––– td(on) Turn-On Delay Time ––– 7.5 ––– VDD = 10V, VGS = 4.5V tr Rise Time ––– 25 ––– I ns D = 20A td(off) Turn-Off Delay Time ––– 57 ––– RG= 1.0 tf Fall Time ––– 37 ––– See Fig.15 Ciss Input Capacitance ––– 3620 ––– VGS = 0V Coss Output Capacitance ––– 900 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 620 ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS (Thermally limited) Single Pulse Avalanche Energy ––– 120 mJ IAR Avalanche Current ––– 20 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 40 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse ––– ––– 160 S (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 41 62 ns TJ = 25°C, IF = 20A, VDD = 10V Qrr Reverse Recovery Charge ––– 68 100 nC di/dt = 220A/µs
Thermal Resistance
Parameter Typ. Max. Units
RJC (Bottom) Junction-to-Case ––– 3.4 RJC (Top) Junction-to-Case ––– 37 °C/W RJA Junction-to-Ambient ––– 46 RJA (<10s) Junction-to-Ambient ––– 31 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015