Datasheet 2ED2106 (4) S06F (J) (Infineon) - 8

2ED2106 (4) S06F (J) 650 V high-side and low-side gate driver with integrated bootstrap diode 4.4 Dynamic electrical characteristics VCC = VBS = 15 V, VSS = COM, TA = 25 oC and CL = 1000 pF unless otherwise specified. Table 6 Dynamic electrical characteristics Test Symbol Definition Min. Typ. Max. Units Conditions t ON Turn-on propagation delay — 200 300 t OFF Turn-off propagation delay — 200 300 VLIN/HIN = 0 V t R Turn-on rise time — 100 150 ns or 5 V t F Turn-off fal time — 35 80 VS = 0 V MT Delay matching time (HS & LS turn-on/off) — — 35 Datasheet 8 of 24 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Potential applications Product validation Ordering information Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Matched propagation delays 5.4 Input logic compatibility 5.5 Undervoltage lockout 5.6 Bootstrap diode 5.7 Calculating the bootstrap capacitance CBS 5.8 Tolerant to negative tranisents on input pins 5.9 Negative voltage transient tolerance of VS pin 5.10 NTSOA – Negative Transient Safe Operating Area 5.11 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.12 Maximum switching frequency 5.13 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history