Datasheet 2ED2182 (4) S06F (J) (Infineon) - 3

link to page 1 link to page 1 link to page 2 link to page 2 link to page 3 link to page 4 link to page 5 link to page 5 link to page 5 link to page 6 link to page 6 link to page 6 link to page 7 link to page 8 link to page 9 link to page 9 link to page 9 link to page 10 link to page 10 link to page 11 link to page 11 link to page 12 link to page 14 link to page 14 link to page 15 link to page 16 link to page 16 link to page 17 link to page 19 link to page 19 link to page 20 link to page 21 link to page 22 link to page 22 link to page 23 2ED2182 (4) S06F (J) 650V Half-Bridge gate driver with integrated bootstrap diode 1 Table of contents Product summary .. 1 Product validation ... 1 Description………………………………………………………………………………………………………………….2 Summary of feature comparison of the 2ED218x family .. 2 1 Table of contents.. 3 2 Block diagram .. 4 3 Pin configuration and functionality ... 5 3.1 Pin configuration ... 5 3.2 Pin functionality .. 5 4 Electrical parameters ... 6 4.1 Absolute maximum ratings ... 6 4.2 Recommended operating conditions... 6 4.3 Static electrical characteristics .. 7 4.4 Dynamic electrical characteristics.. 8 5 Application information and additional details .. 9 5.1 IGBT / MOSFET gate drive ... 9 5.2 Switching and timing relationships .. 9 5.3 Deadtime and matched propagation delays ... 10 5.4 Input logic compatibility ... 10 5.5 Undervoltage lockout ... 11 5.6 Bootstrap diode ... 11 5.7 Calculating the bootstrap capacitance CBS .. 12 5.8 Tolerant to negative tranisents on input pins .. 14 5.9 Negative voltage transient tolerance of VS pin .. 14 5.10 NTSOA – Negative Transient Safe Operating Area ... 15 5.11 Higher headroom for input to output signal transmission with logic operation upto -11 V .. 16 5.12 Maximum switching frequency ... 16 5.13 PCB layout tips .. 17 6 Qualification information ... 19 7 Related products .. 19 8 Package details .. 20 9 Part marking information .. 21 10 Additional documentation and resources ... 22 10.1 Infineon online forum resources .. 22 11 Revision history .. 23 Datasheet 3 of 24 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Product validation Description Summary of feature comparison of the 2ED218x family 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Deadtime and matched propagation delays 5.4 Input logic compatibility 5.5 Undervoltage lockout 5.6 Bootstrap diode 5.7 Calculating the bootstrap capacitance CBS 5.8 Tolerant to negative tranisents on input pins 5.9 Negative voltage transient tolerance of VS pin 5.10 NTSOA – Negative Transient Safe Operating Area 5.11 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.12 Maximum switching frequency 5.13 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history