Datasheet AD8212 (Analog Devices) - 3

制造商Analog Devices
描述High Voltage Current Shunt Monitor
页数 / 页13 / 3 — Data Sheet. AD8212. SPECIFICATIONS. Table 1. Parameter. …
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Data Sheet. AD8212. SPECIFICATIONS. Table 1. Parameter. Conditions/Comments. Min. Typ. Max. Unit

Data Sheet AD8212 SPECIFICATIONS Table 1 Parameter Conditions/Comments Min Typ Max Unit

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Data Sheet AD8212 SPECIFICATIONS
VS = 15 V, TOPR = −40°C to +125°C, TA = 25°C, unless otherwise noted.
Table 1. Parameter Conditions/Comments Min Typ Max Unit
SUPPLY VOLTAGE (V+) No external pass transistor 7 65 V With external PNP transistor1 7 >500 V SUPPLY CURRENT2 (ISUPPLY = IOUT + IBIAS) V+ = 7 V to 65 V 220 720 µA High voltage operation, using external PNP 200 1500 µA VOLTAGE OFFSET Offset Voltage (RTI) TA ±2 mV Over Temperature (RTI) TOPR ±3 mV Offset Drift TOPR ±10 µV/°C INPUT Input Impedance Differential 2 kΩ Common Mode (VCM) V+ = 7 V to 65 V 5 MΩ Voltage Range Differential Maximum voltage between V+ and VSENSE 500 mV VSENSE (Pin 8) Current3 V+ = 7 V to 65 V, TOPR 100 200 nA OUTPUT Transconductance 1000 µA/V Current Range (IOUT) 7 V ≤ V+ ≤ 65 V, 0 mV to 500 mV differential input 500 µA Gain Error for TOPR 7 V ≤ V+ ≤ 65 V, with respect to 500 µA full scale ±1 % Impedance 20 MΩ Voltage Range 0 V+ − 5 V REGULATOR Nominal Value 7 V ≤ V+ ≤ 65 V 4.80 5 5.20 V PSRR 7 V ≤ V+ ≤ 65 V 80 dB Bias Current (IBIAS) TOPR, 7 V ≤ V+ ≤ 65 V 185 200 µA TOPR, high voltage operation 200 1000 µA DYNAMIC RESPONSE Small Signal −3 dB Bandwidth Gain = 10 1000 kHz Gain = 20 500 kHz Gain = 50 100 kHz Settling Time Within 0.1% of the true output, gain = 20 2 µs ALPHA PIN INPUT CURRENT 25 µA NOISE 0.1 Hz to 10 Hz, RTI 1.1 µV p-p Spectral Density, 1 kHz, RTI 40 nV/√Hz TEMPERATURE RANGE For Specified Performance (TOPR) −40 +125 °C 1 Range dependent on the VCE breakdown of the transistor. 2 The AD8212 supply current in normal voltage operation (V+ = 7 V to 65 V) is the bias current (IBIAS) added to output current (IOUT). Output current varies upon input differential voltage and can range from 0 µA to 500 µA. IBIAS in this mode of operation is typically 185 µA and 200 µA maximum. For high voltage operation mode, refer to the High Voltage Operation Using an External PNP Transistor section. 3 The current of the amplifier into VSENSE (Pin 8) increases when operating in high voltage mode. See the High Voltage Operation Using an External PNP Transistor section for more information. Rev. C | Page 3 of 13 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION NORMAL OPERATION (7 V TO 65 V SUPPLY (V+) RANGE) HIGH VOLTAGE OPERATION USING AN EXTERNAL PNP TRANSISTOR OUTPUT CURRENT COMPENSATION CIRCUIT APPLICATIONS INFORMATION GENERAL HIGH-SIDE CURRENT SENSING MOTOR CONTROL 500 V CURRENT MONITOR BIDIRECTIONAL CURRENT SENSING OUTLINE DIMENSIONS ORDERING GUIDE