Datasheet MMBT4403 (Diodes) - 3

MMBT4403 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage BVCBO -40 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO -40 ⎯ V IC = -10.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -6.0 ⎯ V IE = -100μA, IC = 0 Collector Cutoff Current ICEX ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V Base Cutoff Current IBL ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V
ON CHARACTERISTICS (Note 8)
30 ⎯ IC = -100µA, VCE = -1.0V 60 ⎯ IC = -1.0mA, VCE = -1.0V DC Current Gain hFE 100 ⎯ ⎯ IC = -10mA, VCE = -1.0V 100 300 IC = -150mA, VCE = -2.0V 20 ⎯ IC = -500mA, VCE = -2.0V -0.40 I Collector-Emitter Saturation Voltage V C = -150mA, IB = -15mA CE(sat) ⎯ V -0.75 IC = -500mA, IB = -50mA -0.75 -0.95 I Base-Emitter Saturation Voltage V C = -150mA, IB = -15mA BE(sat) ⎯ V -1.30 IC = -500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10-4 VCE = -10V, IC = -1.0mA, Small Signal Current Gain h f = 1.0kHz fe 60 500 ⎯ Output Admittance hoe 1.0 100 μS V Current Gain-Bandwidth Product f CE = -10V, IC = -20mA, T 200 ⎯ MHz f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td ⎯ 15 ns VCC = -30V, IC = -150mA, Rise Time tr ⎯ VBE( 20 ns off) = -2.0V, IB1 = -15mA Storage Time ts ⎯ 225 ns VCC = -30V, IC = -150mA, Fall Time tf ⎯ IB1 30 ns = IB2 = -15mA Notes: 8. Short duration pulse test used to minimize self-heating effect. MMBT4403 3 of 6 March 2012 Document Number: DS30058 Rev. 11 - 2
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