Datasheet SCT3160KL (Rohm) - 4
| 制造商 | Rohm |
| 描述 | N-channel SiC power MOSFET |
| 页数 / 页 | 13 / 4 — SCT3160KL. Body diode electrical characteristics. TSQ50211-SCT3160KL. … |
| 文件格式/大小 | PDF / 716 Kb |
| 文件语言 | 英语 |
SCT3160KL. Body diode electrical characteristics. TSQ50211-SCT3160KL. 14.Jun.2018 - Rev.005
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SCT3160KL
Datasheet l
Body diode electrical characteristics
(Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Inverse diode continuous, I - - 17 A forward current S *1 Tc = 25°C Inverse diode direct current, I pulsed SM *2 - - 42 A Forward voltage V *5 VGS = 0V, IS = 5A - 3.2 - V SD Reverse recovery time t *5 - 13 - ns rr IF =5A, VR = 600V Reverse recovery charge Q *5 - 26 - nC rr di/dt = 1100A/ms Peak reverse recovery current I *5 - 4 - A rrm *1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 Example of acceptable Vgs waveform *4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12
14.Jun.2018 - Rev.005
Datasheet l
Body diode electrical characteristics
(Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Inverse diode continuous, I - - 17 A forward current S *1 Tc = 25°C Inverse diode direct current, I pulsed SM *2 - - 42 A Forward voltage V *5 VGS = 0V, IS = 5A - 3.2 - V SD Reverse recovery time t *5 - 13 - ns rr IF =5A, VR = 600V Reverse recovery charge Q *5 - 26 - nC rr di/dt = 1100A/ms Peak reverse recovery current I *5 - 4 - A rrm *1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 Example of acceptable Vgs waveform *4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12
14.Jun.2018 - Rev.005