Datasheet SCT3160KLHR (Rohm) - 4
| 制造商 | Rohm |
| 描述 | Automotive Grade N-channel SiC power MOSFET |
| 页数 / 页 | 13 / 4 — SCT3160KLHR. Body diode electrical characteristics. TSQ50211-SCT3160KLHR. … |
| 文件格式/大小 | PDF / 963 Kb |
| 文件语言 | 英语 |
SCT3160KLHR. Body diode electrical characteristics. TSQ50211-SCT3160KLHR. 16.Nov.2018 - Rev.001
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SCT3160KLHR
Datasheet l
Body diode electrical characteristics
(Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Body diode continuous, - - 17 A forward current IS *1 Tc = 25°C Body diode direct current, ISM *2 - - 42 A pulsed Forward voltage V *5 SD VGS = 0V, ID = 5A - 3.2 - V *5 IF = 5A Reverse recovery time trr - 13 - ns VR = 600V Reverse recovery charge Q *5 rr - 26 - nC di/dt = 1100A/μs L Peak reverse recovery current I *5 σ = 50nH, Cσ = 200pF rrm - 4 - A See Fig. 3-1, 3-2. *1 Limited by maximum temperature allowed. *2 PW 10μs, Duty cycle 1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12
16.Nov.2018 - Rev.001
Datasheet l
Body diode electrical characteristics
(Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Body diode continuous, - - 17 A forward current IS *1 Tc = 25°C Body diode direct current, ISM *2 - - 42 A pulsed Forward voltage V *5 SD VGS = 0V, ID = 5A - 3.2 - V *5 IF = 5A Reverse recovery time trr - 13 - ns VR = 600V Reverse recovery charge Q *5 rr - 26 - nC di/dt = 1100A/μs L Peak reverse recovery current I *5 σ = 50nH, Cσ = 200pF rrm - 4 - A See Fig. 3-1, 3-2. *1 Limited by maximum temperature allowed. *2 PW 10μs, Duty cycle 1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12
16.Nov.2018 - Rev.001