Datasheet LSK489 (Linear Systems) - 2
| 制造商 | Linear Systems |
| 描述 | Low Noise Low Capacitance Monolithic Dual N-channel JFET Amplifier |
| 页数 / 页 | 6 / 2 — MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated). SYMBOL. … |
| 文件格式/大小 | PDF / 658 Kb |
| 文件语言 | 英语 |
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated). SYMBOL. CHARACTERISTIC. MIN. TYP MAX UNITS. CONDITIONS
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MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
G V S1 G V S2 Differential Gate to Source Cutoff 20 Voltage mV VDS = 10V, ID = 1mA IDSS1 Gate to Source Saturation Current Ratio 0.9 1.0 VDS = 10V, VGS = 0V IDSS2
COMMON MODE REJECTION RATIO
CMRR 95 102 dB VDS = 10V to 20V, ID = 200µA -20 log│∆VGS1-2/∆VDS│
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
V e DS = 15V, ID = 2.0mA, f = 1kHz, n Noise Voltage 1.8 2.0 nV/√Hz NBW = 1Hz V e DS = 15V, ID = 2.0mA, f = 10Hz, n Noise Voltage 2.8 3.5 nV/√Hz NBW = 1Hz CISS Common Source Input Capacitance 4 8 pF VDS = 15V, ID = 500µA, f = 1MHz Common Source Reverse Transfer CRSS 3 pF Capacitance
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BVGSS Gate to Source Breakdown Voltage -60 V VDS = 0, ID = -1nA V(BR)G1 - G2 Gate to Gate Breakdown Voltage ±30 ±45 V IG= ±1µA, ID=IS=0 A (Open Circuit) VGS(OFF) Gate to Source Pinch-off Voltage -1.5 -3.5 V VDS = 15V, ID = 1nA VGS Gate to Source Operating Voltage -0.5 -3.5 V VDS = 15V, ID = 500µA I 2 DSS Drain to Source Saturation Current 2.5 5 15 mA VDG = 15V, VGS = 0 -2 -25 pA VDG = 15V, ID = 200µA IG Gate Operating Current -0.8 -10 nA TA = 125°C IGSS Gate to Source Leakage Current -100 pA VDG = -15V, VDS = 0 Gfs Full Conductance Transconductance 1500 µS VDG = 15V, VGS = 0, f = 1kHz Gfs Transconductance 1000 1500 µS VDG = 15V, ID = 500µA GOS Full Output Conductance 40 µS VDG = 15V, VGS = 0 GOS Output Conductance 1.8 2.7 µS VDG = 15V, ID = 200µA V NF Noise Figure 0.5 dB DS = 15V, VGS = 0, RG = 10MΩ, f = 100Hz, NBW = 6Hz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201151 05/14/2014 Rev#A30 ECN# LSK489
G V S1 G V S2 Differential Gate to Source Cutoff 20 Voltage mV VDS = 10V, ID = 1mA IDSS1 Gate to Source Saturation Current Ratio 0.9 1.0 VDS = 10V, VGS = 0V IDSS2
COMMON MODE REJECTION RATIO
CMRR 95 102 dB VDS = 10V to 20V, ID = 200µA -20 log│∆VGS1-2/∆VDS│
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
V e DS = 15V, ID = 2.0mA, f = 1kHz, n Noise Voltage 1.8 2.0 nV/√Hz NBW = 1Hz V e DS = 15V, ID = 2.0mA, f = 10Hz, n Noise Voltage 2.8 3.5 nV/√Hz NBW = 1Hz CISS Common Source Input Capacitance 4 8 pF VDS = 15V, ID = 500µA, f = 1MHz Common Source Reverse Transfer CRSS 3 pF Capacitance
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BVGSS Gate to Source Breakdown Voltage -60 V VDS = 0, ID = -1nA V(BR)G1 - G2 Gate to Gate Breakdown Voltage ±30 ±45 V IG= ±1µA, ID=IS=0 A (Open Circuit) VGS(OFF) Gate to Source Pinch-off Voltage -1.5 -3.5 V VDS = 15V, ID = 1nA VGS Gate to Source Operating Voltage -0.5 -3.5 V VDS = 15V, ID = 500µA I 2 DSS Drain to Source Saturation Current 2.5 5 15 mA VDG = 15V, VGS = 0 -2 -25 pA VDG = 15V, ID = 200µA IG Gate Operating Current -0.8 -10 nA TA = 125°C IGSS Gate to Source Leakage Current -100 pA VDG = -15V, VDS = 0 Gfs Full Conductance Transconductance 1500 µS VDG = 15V, VGS = 0, f = 1kHz Gfs Transconductance 1000 1500 µS VDG = 15V, ID = 500µA GOS Full Output Conductance 40 µS VDG = 15V, VGS = 0 GOS Output Conductance 1.8 2.7 µS VDG = 15V, ID = 200µA V NF Noise Figure 0.5 dB DS = 15V, VGS = 0, RG = 10MΩ, f = 100Hz, NBW = 6Hz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201151 05/14/2014 Rev#A30 ECN# LSK489