Datasheet IRLB8721PbF (Infineon) - 6
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 9 / 6 — Fig 12. Fig 13a. Fig 13b. Fig 13c. Fig 14a. Fig 14b |
| 文件格式/大小 | PDF / 274 Kb |
| 文件语言 | 英语 |
Fig 12. Fig 13a. Fig 13b. Fig 13c. Fig 14a. Fig 14b
该数据表的模型线
文件文字版本
IRLB8721PbF ) 32 Ω 400 ) m( J I e m( D c I 28 D = 31A n y TOP 5.4A a g t r s 10A i e s n 300 BOTTOM 25A e 24 E R e n hc O n 20 e al cr a u v 200 o A S 16 e - sl ot u - T P n J = 125°C i e a 12 l r g 100 D n i , ) S n , 8 o S ( A S E D TJ = 25°C R 4 0 2 4 6 8 10 25 50 75 100 125 150 175 Starting T V J, Junction Temperature (°C) GS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13a.
Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp L DRIVER VDS RG D.U.T + - VDD IAS A 20V VGS t 0.01 p Ω IAS
Fig 13b.
Unclamped Inductive Test Circuit
Fig 13c.
Unclamped Inductive Waveforms RD V V DS DS 90% VGS D.U.T. RG +-VDD 10% VGS VGS Pulse Width ≤ 1 µs t Duty Factor ≤ 0.1 % d(on) tr td(off) tf
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms 6 www.irf.com
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13a.
Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp L DRIVER VDS RG D.U.T + - VDD IAS A 20V VGS t 0.01 p Ω IAS
Fig 13b.
Unclamped Inductive Test Circuit
Fig 13c.
Unclamped Inductive Waveforms RD V V DS DS 90% VGS D.U.T. RG +-VDD 10% VGS VGS Pulse Width ≤ 1 µs t Duty Factor ≤ 0.1 % d(on) tr td(off) tf
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms 6 www.irf.com