Datasheet PESD2V8R1BSF (Nexperia) - 4
| 制造商 | Nexperia |
| 描述 | Ultra low capacitance bidirectional ESD protection diode |
| 页数 / 页 | 13 / 4 — Nexperia. PESD2V8R1BSF. Ultra low capacitance bidirectional ESD … |
| 修订版 | 19012020 |
| 文件格式/大小 | PDF / 575 Kb |
| 文件语言 | 英语 |
Nexperia. PESD2V8R1BSF. Ultra low capacitance bidirectional ESD protection diode. 9. Characteristics Table 6. Characteristics
该数据表的模型线
文件文字版本
link to page 4 link to page 4 link to page 4
Nexperia PESD2V8R1BSF Ultra low capacitance bidirectional ESD protection diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit
VBR breakdown voltage IR = 0.1 mA; Tamb = 25 °C 7.5 9 11 V IRM reverse leakage current VRWM = 2.8 V; Tamb = 25 °C - 1 50 nA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.1 0.15 pF f = 2.5 GHz; VR = 0 V; Tamb = 25 °C - 0.1 - pF VCL clamping voltage IPPM = 4.5 A; tp = 8/20 μs; Tamb = 25 °C [1] - - 5 V IPP = 8 A; tp = TLP; Tamb = 25 °C [2] - 6 - V Rdyn dynamic resistance IR = 10 A; Tamb = 25 °C [2] - 0.45 - Ω αIL insertion loss f = 10 GHz - -0.21 - dB αRL return loss - -17.4 - dB [1] According to IEC 61000-4-5 and IEC 61643-321. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008. aaa-017793 2 aaa-30460 0.05 S21 S21 (dB) (dB) -2 -0.05 -6 -0.15 -10 -0.25 10-2 10-1 1 102 10 108 1010 109 f (GHz) f (Hz)
Fig. 3. Insertion loss; typical values Fig. 4. Insertion loss; typical values
PESD2V8R1BSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 5 November 2019 4 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
Nexperia PESD2V8R1BSF Ultra low capacitance bidirectional ESD protection diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit
VBR breakdown voltage IR = 0.1 mA; Tamb = 25 °C 7.5 9 11 V IRM reverse leakage current VRWM = 2.8 V; Tamb = 25 °C - 1 50 nA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.1 0.15 pF f = 2.5 GHz; VR = 0 V; Tamb = 25 °C - 0.1 - pF VCL clamping voltage IPPM = 4.5 A; tp = 8/20 μs; Tamb = 25 °C [1] - - 5 V IPP = 8 A; tp = TLP; Tamb = 25 °C [2] - 6 - V Rdyn dynamic resistance IR = 10 A; Tamb = 25 °C [2] - 0.45 - Ω αIL insertion loss f = 10 GHz - -0.21 - dB αRL return loss - -17.4 - dB [1] According to IEC 61000-4-5 and IEC 61643-321. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008. aaa-017793 2 aaa-30460 0.05 S21 S21 (dB) (dB) -2 -0.05 -6 -0.15 -10 -0.25 10-2 10-1 1 102 10 108 1010 109 f (GHz) f (Hz)
Fig. 3. Insertion loss; typical values Fig. 4. Insertion loss; typical values
PESD2V8R1BSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 5 November 2019 4 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents