Datasheet MBR140SF, NRVB140SF (ON Semiconductor) - 2

link to page 2 link to page 2 link to page 2 link to page 2 link to page 2 link to page 3 link to page 2 link to page 3
MBR140SF, NRVB140SF MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current (At Rated VR, TL = 112°C) IO 1.0 A Peak Repetitive Forward Current IFRM A (At Rated VR, Square Wave, 100 kHz, TL = 95°C) 2.0 Non−Repetitive Peak Surge Current IFSM A (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) 30 Storage Temperature Tstg −55 to 150 °C Operating Junction Temperature TJ −55 to 125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1) Rtjl 26 °C/W Thermal Resistance, Junction−to−Lead (Note 2) Rtjl 21 Thermal Resistance, Junction−to−Ambient (Note 1) Rtja 325 Thermal Resistance, Junction−to−Ambient (Note 2) Rtja 82 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 VF
TJ = 25
°
C TJ = 85
°
C
V (IF = 0.1 A) 0.36 0.30 (IF = 1.0 A) 0.55 0.515 (IF = 3.0 A) 0.85 0.88 Maximum Instantaneous Reverse Current (Note 3), See Figure 4 IR
TJ = 25
°
C TJ = 85
°
C
mA (VR = 40 V) 0.5 25 (VR = 20 V) 0.15 18 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
http://onsemi.com 2