Datasheet BSP122 (Nexperia) - 3

Philips Semiconductors Product specification N-channel enhancement mode BSP122 vertical D-MOS transistor FEATURES QUICK REFERENCE DATA
• Direct interface to C-MOS, TTL,
SYMBOL PARAMETER MAX. UNIT
etc. V • DS drain-source voltage (DC) 200 V High-speed switching I • D drain current (DC) 550 mA No secondary breakdown. RDSon drain-source on-state resistance 2.5 Ω VGSth gate-source threshold voltage 2 V
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in handbook, halfpage
4
d telephone sets and for applications in relay, high-speed and line transformer drivers. g
PINNING - SOT223 1 2 3
s
PIN DESCRIPTION
Top view MAM054 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 drain
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC) − 200 V VGSO gate-source voltage (DC) open drain − ±20 V ID drain current (DC) − 550 mA IDM peak drain current − 3 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.5 W Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.
THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient; note 1 83.3 K/W
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2. 2001 May 18 2 Document Outline FEATURES QUICK REFERENCE DATA DESCRIPTION PINNING - SOT223 LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT223 DATA SHEET STATUS DEFINITIONS DISCLAIMERS NOTES