Datasheet SRK1001 (STMicroelectronics) - 7

制造商STMicroelectronics
描述Adaptive synchronous rectification controller for flyback converter
页数 / 页27 / 7 — SRK1001. Electrical characteristics. Symbol. Parameter. Test Condition. …
文件格式/大小PDF / 615 Kb
文件语言英语

SRK1001. Electrical characteristics. Symbol. Parameter. Test Condition. Min. Typ. Max. Unit

SRK1001 Electrical characteristics Symbol Parameter Test Condition Min Typ Max Unit

该数据表的模型线

文件文字版本

link to page 7 link to page 7 link to page 7 link to page 7
SRK1001 Electrical characteristics Symbol Parameter Test Condition Min. Typ. Max. Unit
VDIS_ON Enable threshold 1.4 1.6 1.8 V IDIS Sourced current 5 µA Tmask Sync signal masking time after turn-on 170 ns T Time-out interval from DVS falling, after which out 300 ns turn-on by sync signal is not allowed Tpulse Minimum sync pulse width to trigger a turn-off 50 ns
Blanking time after turn-on programming
Minimum turn-on time programmable by R RTON_MIN = 33 kΩ 0.28 0.4 0.52 T TON ON_MIN µs in the range [33 kΩ - 250 kΩ] RTON_MAX= 250 kΩ 2.1 3.0 3.9 ITON Sourced current In run mode 8 µA
Blanking time after turn off programming
Blanking time after turn-off (with DVS voltage RTOFF_MIN = 16 kΩ 0.34 0.48 0.63 TOFF_MIN continuously above VTH_A) programmable by µs R R TOFF in the range [16 kΩ - 200 kΩ] TOFF_MAX= 200 kΩ 4.7 6.7 8.7 ITOFF Sourced current Run/Sleep Mode 10 µA
Low consumption mode
Minimum operating current conduction time to RTON_MIN = 33 kΩ 0.49 0.7 0.91 T enter sleep-mode: ON_sleep_in µs T R ON_sleep_in = TON_MIN + 300 ns TON_MAX= 250 kΩ 2.31 3.3 4.29 Restart current conduction time from sleep- RTON_MIN = 33 kΩ 0.55 0.78 1 T mode: ON_sleep_out µs T R ON_sleep_out = 1.2*TON_MIN + 300 ns TON_MAX= 250 kΩ 2.73 3.9 5.07 Switching stop time interval detection to enter Tstop low consumption mode (primary controller 80 120 160 µs burst-mode)
Gate driver
Isource_pk Output source peak current See (2) 0.6 A Isink_pk Output sink peak current See (2) 1 A VCC = 20V, CGD = 4.7 nF 45 tr_1 Rise Time (see picture below) ns VCC = 20V, CGD = 10 nF 75 VCC = 20V, CGD = 4.7 nF 140 tr_2 Rise Time (see picture below) ns VCC = 20V, CGD = 10 nF 140 VCC = 20V, CGD = 4.7 nF 60 ns tf Fall Time (see picture below) VCC = 20V, CGD = 10 nF 120 VGDclamp Drive clamp voltage VCC = 20V (4) 10.6 11.6 12.6 V VGD_ad-step Adaptive driving step voltage VCC = 20V (4) 400 mV VGDL_UVLO UVLO saturation VCC = 0 to VCC_On, Isink = 5 mA 1 1.3 V 1. Parameters tracking each other 2. Parameter guaranteed by design 3. Low-consumption-mode is one of the following: sleep-mode for conduction below min TON, converter burst-mode detection or DIS pin pulled high for at least 4 cycles 4. Parameters tracking each other
DS13155
-
Rev 1 page 7/27
Document Outline 1 Block diagram and pin connection 2 Maximum ratings 3 Typical application schematic 4 Electrical characteristics 5 Operation description 5.1 Drain voltage sensing 5.2 Turn-on 5.3 Minimum TON programming 5.4 Adaptive turn-off and TIMER 5.4.1 Fixed frequency mixed DCM/CCM operation 5.4.2 QR operation (with valley skipping) 5.4.3 Fixed frequency DCM operation 5.4.4 Variable frequency CCM operation 5.5 Minimum TOFF programming 5.6 Start-up phase 5.7 Low consumption mode operation: sleep-mode, burst mode, disable state 5.8 DIS/SYNC pin functions 5.9 VAUX pin operation in CC regulation 5.9.1 Example for parameter calculations 5.10 Operation in CC regulation and short circuit 5.11 Adaptive gate drive 6 Layout guidelines 7 Package mechanical data Revision history