Datasheet NTZD3155C (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 |
| 页数 / 页 | 8 / 1 — www.onsemi.com. Features. ID Max. (BR)DSS. RDS(on) Typ. Applications. … |
| 修订版 | 4 |
| 文件格式/大小 | PDF / 144 Kb |
| 文件语言 | 英语 |
www.onsemi.com. Features. ID Max. (BR)DSS. RDS(on) Typ. Applications. PINOUT: SOT−563. MAXIMUM RATINGS. Parameter. Symbol. Value. Unit. MARKING
该数据表的模型线
文件文字版本
link to page 1 link to page 1 link to page 1 link to page 1 NTZD3155C MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA
www.onsemi.com Features
• Leading Trench Technology for Low RDS(on) Performance
ID Max
•
V
(Note 1) High Efficiency System Performance
(BR)DSS RDS(on) Typ
• 0.4 Low Threshold Voltage W @ 4.5 V N−Channel • 0.5 W @ 2.5 V 540 mA ESD Protected Gate 20 V • 0.7 W @ 1.8 V Small Footprint 1.6 x 1.6 mm • 0.5 W @ −4.5 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS P−Channel Compliant −20 V 0.6 W @ −2.5 V −430 mA 1.0 W @ −1.8 V
Applications
• DC−DC Conversion Circuits
PINOUT: SOT−563
• Load/Power Switching with Level Shift • Single or Dual Cell Li−Ion Battery Operated Systems S1 1 6 D • 1 High Speed Circuits • Cell Phones, MP3s, Digital Cameras, and PDAs G1 2 5 G2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Value Unit
D2 3 4 S2 Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±6 V Top View N−Channel Continu- Steady TA = 25°C 540 ous Drain Current State
MARKING
(Note 1) TA = 85°C 390 6
DIAGRAM
t v 5 s TA = 25°C 570 ID mA 1 P−Channel Continu- Steady TA = 25°C −430
SOT−563−6
TW M G ous Drain Current State G (Note 1) TA = 85°C −310
CASE 463A
t v 5 s TA = 25°C −455 TW = Specific Device Code Power Dissipation Steady 250 M = Date Code (Note 1) State T G = Pb−Free Package A = 25°C PD mW t v 5 s 280 (Note: Microdot may be in either location) Pulsed Drain Current N−Channel 1500 t
ORDERING INFORMATION
p = 10 ms IDM mA P−Channel −750
Device Package Shipping
† Operating Junction and Storage Temperature TJ, −55 to °C TSTG 150 NTZD3155CT1G 4000 / Tape & Reel Source Current (Body Diode) I NTZD3155CT2G SOT−563 S 350 mA (Pb−Free) Lead Temperature for Soldering Purposes 260 °C NTZD3155CT5G 8000 / Tape & Reel (1/8” from case for 10 s) TL †For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specifications assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2019 − Rev. 4 NTZD3155C/D
www.onsemi.com Features
• Leading Trench Technology for Low RDS(on) Performance
ID Max
•
V
(Note 1) High Efficiency System Performance
(BR)DSS RDS(on) Typ
• 0.4 Low Threshold Voltage W @ 4.5 V N−Channel • 0.5 W @ 2.5 V 540 mA ESD Protected Gate 20 V • 0.7 W @ 1.8 V Small Footprint 1.6 x 1.6 mm • 0.5 W @ −4.5 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS P−Channel Compliant −20 V 0.6 W @ −2.5 V −430 mA 1.0 W @ −1.8 V
Applications
• DC−DC Conversion Circuits
PINOUT: SOT−563
• Load/Power Switching with Level Shift • Single or Dual Cell Li−Ion Battery Operated Systems S1 1 6 D • 1 High Speed Circuits • Cell Phones, MP3s, Digital Cameras, and PDAs G1 2 5 G2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Value Unit
D2 3 4 S2 Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±6 V Top View N−Channel Continu- Steady TA = 25°C 540 ous Drain Current State
MARKING
(Note 1) TA = 85°C 390 6
DIAGRAM
t v 5 s TA = 25°C 570 ID mA 1 P−Channel Continu- Steady TA = 25°C −430
SOT−563−6
TW M G ous Drain Current State G (Note 1) TA = 85°C −310
CASE 463A
t v 5 s TA = 25°C −455 TW = Specific Device Code Power Dissipation Steady 250 M = Date Code (Note 1) State T G = Pb−Free Package A = 25°C PD mW t v 5 s 280 (Note: Microdot may be in either location) Pulsed Drain Current N−Channel 1500 t
ORDERING INFORMATION
p = 10 ms IDM mA P−Channel −750
Device Package Shipping
† Operating Junction and Storage Temperature TJ, −55 to °C TSTG 150 NTZD3155CT1G 4000 / Tape & Reel Source Current (Body Diode) I NTZD3155CT2G SOT−563 S 350 mA (Pb−Free) Lead Temperature for Soldering Purposes 260 °C NTZD3155CT5G 8000 / Tape & Reel (1/8” from case for 10 s) TL †For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specifications assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2019 − Rev. 4 NTZD3155C/D