Datasheet HSMS-282x (Broadcom) - 4

Typical Performance, T = 25°C (unless otherwise noted), Single Diode C 100 100,000 1 TA = +125C TA = +75C T 10,000 0.8 10 A = +25C TA = –25C (pF) 1000 0.6 CURRENT (mA) 1 CURRENT (nA) 100 0.4 – CAPACITANCE 0.1 – REVERSE C T I – FORWARD F I R 10 TA = +125C 0.2 TA = +75C T 0.01 1 A = +25C 0 0 0.10 0.20 0.30 0.40 0.50 0 5 10 15 0 2 4 6 8 VF – FORWARD VOLTAGE (V) VR – REVERSE VOLTAGE (V) VR – REVERSE VOLTAGE (V) Figure 1. Forward Current vs. Forward Voltage at Figure 2. Reverse Current vs. Reverse Voltage at Figure 3. Total Capacitance vs. Reverse Voltage. Temperatures. Temperatures. 1000 30 30 100 1.0 () 10 IF (Left Scale) 10
µ
A) 100 IF (Left Scale) 10 10 VF (Right Scale) – DYNAMIC RESISTANCE 1 1 V R D - FORWARD CURRENT ( I - FORWARD CURRENT (mA) F I F F (Right Scale) - FORWARD VOLTAGE DIFFERENCE (mV) - FORWARD VOLTAGE DIFFERENCE (mV) V F V F 1 0.3 0.3 1 0.1 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.10 0.15 0.20 0.25 IF – FORWARD CURRENT (mA) VF - FORWARD VOLTAGE (V) VF - FORWARD VOLTAGE (V) Figure 4. Dynamic Resistance vs. Forward Current. Figure 5. Typical Vf Match, Series Pairs and Quads at Figure 6. Typical Vf Match, Series Pairs at Detector Bias Mixer Bias Levels. Levels. 1 10 10 1 DC bias = 3 A (V) -25C (V) 0.1 +25C 0.1 9 +75C 0.01 8 RF in 18 nH HSMS-282B Vo +25C RF in HSMS-282B Vo 0.01 0.001 – OUTPUT VOLTAGE 3.3 nH – OUTPUT VOLTAGE CONVERSION LOSS (dB) V O 100 pF V O 68 100 pF 7 100 K 0.0001 4.7 K 0.001 1E-005 6 -40 -30 -20 -10 0 -20 -10 0 10 20 30 0 2 4 6 8 10 12 Pin – INPUT POWER (dBm) Pin – INPUT POWER (dBm) LOCAL OSCILLATOR POWER (dBm) Figure 7. Typical Output Voltage vs. Input Power, Figure 8. Typical Output Voltage vs. Input Power, Figure 9. Typical Conversion Loss vs. L.O. Drive, 2.0 GHz Small Signal Detector Operating at 850 MHz. Large Signal Detector Operating at 915 MHz. (Ref AN997).
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