Datasheet BC516 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | PNP Darlington Transistor |
| 页数 / 页 | 4 / 2 — BC516. Thermal Characteristics. — PNP Darlington T. Symbol. Parameter. … |
| 文件格式/大小 | PDF / 255 Kb |
| 文件语言 | 英语 |
BC516. Thermal Characteristics. — PNP Darlington T. Symbol. Parameter. Max. Unit. Note:. rans. Electrical Characteristics. istor. Conditions
该数据表的模型线
文件文字版本
BC516 Thermal Characteristics
(1) Values are at T
— PNP Darlington T
A = 25°C unless otherwise noted.
Symbol Parameter Max. Unit
PD Total Device Dissipation, TA = 25°C 625 mW RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
rans Electrical Characteristics
(2)
istor
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO Collector-Emitter Breakdown Voltage IC = -2 mA, IB = 0 -30 V VCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -40 V VEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -10 V ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 -100 nA hFE DC Current Gain IC = -20 mA, VCE = -2 V 30,000 VCE(sat) Collector-Emitter Saturation Voltage IC = -100 mA, IB = -0.1 mA -1 V VBE(on) Base-Emitter On Voltage IC = -10 mA, VCE = -5 V -1.4 V fT Current Gain - Bandwidth Product(3) IC = -10 mA, VCE = -5 V, 200 MHz f = 100 MHz
Notes:
2. Pulse test: pulse width ≤ 2.0% 3. fT = IhfeI · ftest www.onsemi.com 2
(1) Values are at T
— PNP Darlington T
A = 25°C unless otherwise noted.
Symbol Parameter Max. Unit
PD Total Device Dissipation, TA = 25°C 625 mW RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
rans Electrical Characteristics
(2)
istor
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO Collector-Emitter Breakdown Voltage IC = -2 mA, IB = 0 -30 V VCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -40 V VEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -10 V ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 -100 nA hFE DC Current Gain IC = -20 mA, VCE = -2 V 30,000 VCE(sat) Collector-Emitter Saturation Voltage IC = -100 mA, IB = -0.1 mA -1 V VBE(on) Base-Emitter On Voltage IC = -10 mA, VCE = -5 V -1.4 V fT Current Gain - Bandwidth Product(3) IC = -10 mA, VCE = -5 V, 200 MHz f = 100 MHz
Notes:
2. Pulse test: pulse width ≤ 2.0% 3. fT = IhfeI · ftest www.onsemi.com 2