Datasheet SMBJ12(C)AQ – SMBJ100(C)AQ (Diodes) - 4

SMBJ12(C)AQ – SMBJ100(C)AQ
100 10,000 Measured at zero bias F O T % EN 75 IN R G RU (pF) 1000 C Uni-directional ATIN R CE R E O 50 R E ITAN E D W LS APAC , C 100 EAK PO 25 C T Bi-directional EAK PU P P 10 X 1000 Waveform T = 25 C j ° TJ = 25°C as defined by REA f = 1.0 MHz 0 V = 50 mV p-p 10 sig 0 25 50 75 100 125 150 175 200 1 10 100 1000 T , AMBIENT TEMPERATURE ( C) A ° V , REVERSE STANDOFF VOLTAGE (V) RWM Fig. 1 Pulse Derating Curve Fig. 2 Typical Total Capacitance 100 T = 25 C j ° J = 25° ) I pp Non Repetitive (kW % R Pulse Waveform E Shown in Fig. 4 T ( 10 W N E O R P R E U LS C U E P LS K U A 1.0 E P K , P A K E P P P, I PP 0.1 0.1 1.0 10 100 1000 10000 t, TIME (ms) Fig. 4 Pulse Waveform 120 ) 5.0 ) (W T (A Pulse Width 8.3ms N N Single Half-Sine-Wave IO E 100 R R PATI 4.0 U S C SI E 80 D G R R E U 3.0 W S 60 O D R P A E W TAT 2.0 R 40 S FO Y K D A A E 20 TE 1.0 , P S ), I FSM (AV 0 M P 1 2 5 10 20 50 100 0.0 0 25 50 75 100 125 150 175 200 NUMBER OF CYCLES AT 60Hz Fig. 5 Maximum Non-Repetitive Surge Current T , LEAD TEMPERATURE ( C) L ° Fig. 6 Steady State Power Derating Curve SMBJ12(C)AQ – SMBJ100(C)AQ 4 of 6 March 2020 Document number: DS40740 Rev. 4 - 2
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© Diodes Incorporated Document Outline Features and Benefits Product Summary (@TA = +25°C) Description and Applications Mechanical Data Marking Information Thermal Characteristics Package Outline Dimensions (Note 12) Suggested Pad Layout