Datasheet PMV20EN (Nexperia) - 4
| 制造商 | Nexperia |
| 描述 | 30 V, N-channel Trench MOSFET |
| 页数 / 页 | 15 / 4 — Nexperia. PMV20EN. 30 V, N-channel Trench MOSFET |
| 修订版 | 05072018 |
| 文件格式/大小 | PDF / 324 Kb |
| 文件语言 | 英语 |
Nexperia. PMV20EN. 30 V, N-channel Trench MOSFET
该数据表的模型线
文件文字版本
Nexperia PMV20EN 30 V, N-channel Trench MOSFET
aaa-013408 102 lD (A) tp = 10 µs 10 tp = 100 µs 1 tp = 1 ms tp = 10 ms DC; Tamb = 25 °C; 6 cm2 10-1 t DC; T p = 100 ms sp = 25 °C 10-210-1 1 102 10 VDS (V) IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage
PMV20EN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. Al rights reserved
Product data sheet 5 July 2018 4 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
aaa-013408 102 lD (A) tp = 10 µs 10 tp = 100 µs 1 tp = 1 ms tp = 10 ms DC; Tamb = 25 °C; 6 cm2 10-1 t DC; T p = 100 ms sp = 25 °C 10-210-1 1 102 10 VDS (V) IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage
PMV20EN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. Al rights reserved
Product data sheet 5 July 2018 4 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents