Datasheet PMV20EN (Nexperia) - 9
制造商 | Nexperia |
描述 | 30 V, N-channel Trench MOSFET |
页数 / 页 | 15 / 9 — Nexperia. PMV20EN. 30 V, N-channel Trench MOSFET. Fig. 15. Gate charge … |
修订版 | 05072018 |
文件格式/大小 | PDF / 324 Kb |
文件语言 | 英语 |
Nexperia. PMV20EN. 30 V, N-channel Trench MOSFET. Fig. 15. Gate charge waveform definitions
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Nexperia PMV20EN 30 V, N-channel Trench MOSFET
017aaa551 10 V VDS GS (V) I 8 D VGS(pl) 6 VGS(th) 4 VGS QGS2 QGS1 2 QGS QGD QG(tot) 003aaa508 0
Fig. 15. Gate charge waveform definitions
0 2 4 6 8 QG (nC) ID = 5 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate charge; typical values
017aaa552 2.5 IS (A) 2.0 1.5 1.0 Tj = 150 °C Tj = 25 °C 0.5 0.00.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information
t1 P duty cycle δ = t t 2 2 t1 t 006aaa812
Fig. 17. Duty cycle definition
PMV20EN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. Al rights reserved
Product data sheet 5 July 2018 9 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents