Datasheet IRLR024NPbF, IRLU024NPbF (Infineon)
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 11 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| 文件格式/大小 | PDF / 316 Kb |
| 文件语言 | 英语 |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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文件文字版本
PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) VDSS = 55V l Straight Lead (IRLU024N) l Advanced Process Technology RDS(on) = 0.065Ω G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for D-Pak I-Pak through-hole mounting applications. Power dissipation levels up to 1.5 watts IRLR024NPbF IRLU024NPbF are possible in typical surface mount applications.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 72 PD @TC = 25°C Power Dissipation 45 W Linear Derating Factor 0.3 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 68 mJ IAR Avalanche Current 11 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.3 RθJA Case-to-Ambient (PCB mount)** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/6/04
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for D-Pak I-Pak through-hole mounting applications. Power dissipation levels up to 1.5 watts IRLR024NPbF IRLU024NPbF are possible in typical surface mount applications.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 72 PD @TC = 25°C Power Dissipation 45 W Linear Derating Factor 0.3 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 68 mJ IAR Avalanche Current 11 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.3 RθJA Case-to-Ambient (PCB mount)** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/6/04