Datasheet AUIRLR014N (Infineon) - 2
| 制造商 | Infineon |
| 描述 | Automotive Grade |
| 页数 / 页 | 10 / 2 — Static @ TJ = 25°C (unless otherwise specified). Parameter Min. Typ. Max. … |
| 文件格式/大小 | PDF / 415 Kb |
| 文件语言 | 英语 |
Static @ TJ = 25°C (unless otherwise specified). Parameter Min. Typ. Max. Units. Conditions
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AUIRLR014N
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.14 V R GS = 10V, ID = 6.0A DS(on) Static Drain-to-Source On-Resistance ––– ––– 0.21 VGS = 4.5V, ID = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA gfs Forward Trans conductance 3.1 ––– ––– S VDS = 25V, ID = 6.0A ––– ––– 25 V I DS = 55V, VGS = 0V DSS Drain-to-Source Leakage Current µA ––– ––– 250 VDS = 55V,VGS = 0V,TJ =150°C Gate-to-Source Forward Leakage ––– ––– 100 V I GS = 16V GSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 7.9 ID = 6.0A Qgs Gate-to-Source Charge ––– ––– 1.4 nC VDS = 44V Qgd Gate-to-Drain Charge ––– ––– 4.4 VGS = 5.0V, See Fig. 6 &13 td(on) Turn-On Delay Time ––– 6.5 ––– VDD = 28V tr Rise Time ––– 47 ––– I ns D = 6.0A td(off) Turn-Off Delay Time ––– 12 ––– RG = 6.2VGS = 5.0V tf Fall Time ––– 23 ––– RD = 4.5,See Fig. 10 Between lead, LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package LS Internal Source Inductance ––– 7.5 ––– and center of die contact Ciss Input Capacitance ––– 265 ––– VGS = 0V Coss Output Capacitance ––– 80 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 38 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol IS ––– ––– 10 (Body Diode) showing the A Pulsed Source Current integral reverse ISM ––– ––– 40 (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 6.0A, VGS = 0V trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C ,IF = 6.0A Qrr Reverse Recovery Charge ––– 48 71 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25°C, L = 1.96mH, RG = 25, IAS = 6A (See fig. 12) ISD 6.0A, di/dt 210A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-12-11
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.14 V R GS = 10V, ID = 6.0A DS(on) Static Drain-to-Source On-Resistance ––– ––– 0.21 VGS = 4.5V, ID = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA gfs Forward Trans conductance 3.1 ––– ––– S VDS = 25V, ID = 6.0A ––– ––– 25 V I DS = 55V, VGS = 0V DSS Drain-to-Source Leakage Current µA ––– ––– 250 VDS = 55V,VGS = 0V,TJ =150°C Gate-to-Source Forward Leakage ––– ––– 100 V I GS = 16V GSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 7.9 ID = 6.0A Qgs Gate-to-Source Charge ––– ––– 1.4 nC VDS = 44V Qgd Gate-to-Drain Charge ––– ––– 4.4 VGS = 5.0V, See Fig. 6 &13 td(on) Turn-On Delay Time ––– 6.5 ––– VDD = 28V tr Rise Time ––– 47 ––– I ns D = 6.0A td(off) Turn-Off Delay Time ––– 12 ––– RG = 6.2VGS = 5.0V tf Fall Time ––– 23 ––– RD = 4.5,See Fig. 10 Between lead, LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package LS Internal Source Inductance ––– 7.5 ––– and center of die contact Ciss Input Capacitance ––– 265 ––– VGS = 0V Coss Output Capacitance ––– 80 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 38 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol IS ––– ––– 10 (Body Diode) showing the A Pulsed Source Current integral reverse ISM ––– ––– 40 (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 6.0A, VGS = 0V trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C ,IF = 6.0A Qrr Reverse Recovery Charge ––– 48 71 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25°C, L = 1.96mH, RG = 25, IAS = 6A (See fig. 12) ISD 6.0A, di/dt 210A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-12-11