Datasheet LND150, LND250 (Microchip) - 4
| 制造商 | Microchip |
| 描述 | N-Channel Depletion-Mode DMOS FETs |
| 页数 / 页 | 16 / 4 — LND150/LND250. 2.0. TYPICAL PERFORMANCE CURVES. Note:. (milliamps). I D. … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
LND150/LND250. 2.0. TYPICAL PERFORMANCE CURVES. Note:. (milliamps). I D. (V). FIGURE 2-1:. FIGURE 2-4:. (Watts) D. (millisiemens)
该数据表的模型线
文件文字版本
LND150/LND250 2.0 TYPICAL PERFORMANCE CURVES Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 6 6 V = 1.0V V = 1.0V GS GS 5 5 4 4 0.5V 0.5V 3 3
(milliamps) (milliamps) I D I D
2 2 0V 0V 1 1 -0.5V -0.5V 0 -1.0V 0 -1.0V 0 250 500 0 1 2 3 5 4
V (V) V (V) DS DS FIGURE 2-1:
Output Characteristics.
FIGURE 2-4:
Saturation Characteristics. 10 2 V = 400V DS SOT-89 8 T = -55°C A 6 25°C 1
(Watts) D
4
(millisiemens) P
TO-92 125°C
FS G
2 SOT-23 00 2 4 6 8 10 00 150 50 100
I (milliamps) D T (°C) A FIGURE 2-2:
Transconductance vs. Drain
FIGURE 2-5:
Power Dissipation vs. Current. Ambient Temperature. 100 1.0 SOT-89 (DC) Pulsed 0.8 SOT-89 TO-92 (DC) T = 25°C A P = 1.2W 10 D SOT-23 (DC) 0.6
(milliamps) I D
0.4 1 TO-92 T = 25°C 0.2 P = 1.0W D A 300μs pulse
Thermal Resistance (normalized)
T = 25°C C 2% duty cycle 0.1 0 1 1000 10 100 0.001 10 0.01 0.1 1.0
V (V) t (seconds) DS P FIGURE 2-3:
Maximum Rated Safe
FIGURE 2-6:
Thermal Response Operating Area. Characteristics. DS20005454A-page 4 2018 Microchip Technology Inc. Document Outline N-Channel Depletion-Mode DMOS FETs Features Applications General Description Package Types 1.0 Electrical Characteristics Absolute Maximum Ratings† DC Electrical Characteristics AC Electrical Characteristics Temperature Specifications Thermal Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: Drain Current vs. RSOURCE. FIGURE 2-11: VGS(OFF) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: TO-92 Pin Function Table TABLE 3-2: SOT-23 Pin Function Table TABLE 3-3: SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Appendix A: Revision History Revision A (August 2018) Product Identification System Worldwide Sales and Service
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 6 6 V = 1.0V V = 1.0V GS GS 5 5 4 4 0.5V 0.5V 3 3
(milliamps) (milliamps) I D I D
2 2 0V 0V 1 1 -0.5V -0.5V 0 -1.0V 0 -1.0V 0 250 500 0 1 2 3 5 4
V (V) V (V) DS DS FIGURE 2-1:
Output Characteristics.
FIGURE 2-4:
Saturation Characteristics. 10 2 V = 400V DS SOT-89 8 T = -55°C A 6 25°C 1
(Watts) D
4
(millisiemens) P
TO-92 125°C
FS G
2 SOT-23 00 2 4 6 8 10 00 150 50 100
I (milliamps) D T (°C) A FIGURE 2-2:
Transconductance vs. Drain
FIGURE 2-5:
Power Dissipation vs. Current. Ambient Temperature. 100 1.0 SOT-89 (DC) Pulsed 0.8 SOT-89 TO-92 (DC) T = 25°C A P = 1.2W 10 D SOT-23 (DC) 0.6
(milliamps) I D
0.4 1 TO-92 T = 25°C 0.2 P = 1.0W D A 300μs pulse
Thermal Resistance (normalized)
T = 25°C C 2% duty cycle 0.1 0 1 1000 10 100 0.001 10 0.01 0.1 1.0
V (V) t (seconds) DS P FIGURE 2-3:
Maximum Rated Safe
FIGURE 2-6:
Thermal Response Operating Area. Characteristics. DS20005454A-page 4 2018 Microchip Technology Inc. Document Outline N-Channel Depletion-Mode DMOS FETs Features Applications General Description Package Types 1.0 Electrical Characteristics Absolute Maximum Ratings† DC Electrical Characteristics AC Electrical Characteristics Temperature Specifications Thermal Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: Drain Current vs. RSOURCE. FIGURE 2-11: VGS(OFF) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: TO-92 Pin Function Table TABLE 3-2: SOT-23 Pin Function Table TABLE 3-3: SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Appendix A: Revision History Revision A (August 2018) Product Identification System Worldwide Sales and Service