Datasheet STB11NM60T4, STP11NM60 (STMicroelectronics)

STB11NM60T4, STP11NM60
Datasheet N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages
Features V
TAB
DSS
TAB
Order codes RDS(on) max. ID Package (@ TJmax)
STB11NM60T4 D²PAK 3 1 650 V 0.45 Ω 11 A 3 STP11NM60 TO-220
D P 2 AK TO-220
2 1 • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance D(2, TAB)
Applications
• Switching applications G(1)
Description
These devices are N-channel Power MOSFETs developed using the second S(3) generation of MDmesh™ technology. These revolutionary Power MOSFETs AM01475v1_noZen associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Product status link
STB11NM60T4 STP11NM60
Product summary Order code STB11NM60T4 Marking
B11NM60
Package
D²PAK
Packing
Tape and reel
Order code STP11NM60 Marking
P11NM60
Package
TO-220
Packing
Tube
DS3653
-
Rev 7
-
October 2018
www.st.com For further information contact your local STMicroelectronics sales office. Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 D²PAK (TO-263) type A package information 4.2 D²PAK packing information 4.3 D²PAK (TO-263) type B package information 4.4 D²PAK type B packing information 4.5 TO-220 type A package information Revision history