Datasheet NST489AMT1G, NSVT489AMT1G (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications |
| 页数 / 页 | 4 / 3 — NST489AMT1G, NSVT489AMT1G. Figure 5. VBE(sat) versus Ic. Figure 6. Safe … |
| 修订版 | 9 |
| 文件格式/大小 | PDF / 62 Kb |
| 文件语言 | 英语 |
NST489AMT1G, NSVT489AMT1G. Figure 5. VBE(sat) versus Ic. Figure 6. Safe Operating Area
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NST489AMT1G, NSVT489AMT1G
1.2 10.00 1.0 3.0 Ic/Ib = 10 0.8 1.00 Ic/Ib = 100 0.6 (sat) (V) OR CURRENT (A) 1 ms BEV 10 ms 0.4 0.10 100 ms 1 s 0.2 COLLECT I C SINGLE PULSE Tamb = 25°C dc 0 0.01 0.001 0.01 0.1 1 2 0.10 1.00 10.00 100.00 Ic (A) VCE(sat) (V)
Figure 5. VBE(sat) versus Ic Figure 6. Safe Operating Area
1000 100 PRODUCT (MHz) , CURRENT−GAIN BANDWIDTH f T 10 1 10 100 1000 IC, COLLECTOR CURRENT (mA)
Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V
1.0 D = 0.5 0.2 THERMAL 0.1 0.1 0.05 ANCE TRANSIENT 0.02 RESIST 0.01 0.01 SINGLE PULSE r(t), NORMALIZED 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (sec)
Figure 8. Normalized Thermal Response www.onsemi.com 3
1.2 10.00 1.0 3.0 Ic/Ib = 10 0.8 1.00 Ic/Ib = 100 0.6 (sat) (V) OR CURRENT (A) 1 ms BEV 10 ms 0.4 0.10 100 ms 1 s 0.2 COLLECT I C SINGLE PULSE Tamb = 25°C dc 0 0.01 0.001 0.01 0.1 1 2 0.10 1.00 10.00 100.00 Ic (A) VCE(sat) (V)
Figure 5. VBE(sat) versus Ic Figure 6. Safe Operating Area
1000 100 PRODUCT (MHz) , CURRENT−GAIN BANDWIDTH f T 10 1 10 100 1000 IC, COLLECTOR CURRENT (mA)
Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V
1.0 D = 0.5 0.2 THERMAL 0.1 0.1 0.05 ANCE TRANSIENT 0.02 RESIST 0.01 0.01 SINGLE PULSE r(t), NORMALIZED 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (sec)
Figure 8. Normalized Thermal Response www.onsemi.com 3