Datasheet TPD7106F (Toshiba) - 9
| 制造商 | Toshiba |
| 描述 | Intelligent Power Device Silicon Power MOS Integrated Circuit |
| 页数 / 页 | 22 / 9 — TPD7106F. 9. Operating Ranges. Table 9.1 Operating Ranges. … |
| 文件格式/大小 | PDF / 637 Kb |
| 文件语言 | 英语 |
TPD7106F. 9. Operating Ranges. Table 9.1 Operating Ranges. Characteristics. Symbol. Condition. Min. Typ. Max. Unit
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TPD7106F 9. Operating Ranges Table 9.1 Operating Ranges Characteristics Symbol Condition Min Typ. Max Unit
Operating supply voltage VDD Tj = -40 to 150°C 4.5 12.0 27.0 V
10. Electrical Characteristics Table 10.1 Electrical Characteristics
(Unless otherwise specified, Tj = -40 to 150°C, VDD = 4.5 to 27.0V)
Characteristics Symbol Pin Test Condition Min Typ. Max Unit
IDD(1) VDD VDD = 12V, VSTBY = VIL, Tj = 25°C - - 5.0 μA I Supply current DD(2) VDD VIN1,2 = VIL, VSTBY = VIH, C1,C2 = 0.01μF - 3.2 6.0 mA VIN1 = VIH, VSTBY = VIH, C1,C2 = 0.01μF, IDD(3) VDD - - 6.0 mA OUT1,OUT2 = open. High level input voltage VIH IN1,IN2, - 2.0 - - V STBY Low level input voltage VIL - - - 0.8 IIH IN1,IN2, VIN = 5V, Note1 - 50 100 Input current μA STBY IIL VIN = 0V -1 - 1 V V V DD = 18 to 27V, C1,C2 = 0.01μF, DD OH1 OUT1 - 40.0 VIN1 = VIH, VSTBY = VIH, IOUT1 = -0.1mA +7.0 V V V V High level output voltage V DD = 8 to 18V, C1,C2 = 0.01μF, DD DD DD OH2 OUT1 V VIN1 = VIH, VSTBY = VIH, IOUT1 = -0.1mA +10.0 +12.0 +14.0 V V V V V DD = 4.5 to 8V, VIN1 = VIH, DD DD DD OH3 OUT1 VSTBY = VIH, IOUT1 = -0.1mA +5.4 +7.0 +14.0 VIN1 = VIH, VSTBY = VIH, Output clamp voltage VOCL OUT1 34 37 40 V C1,C2 = 0.01μF, IOUT1 = +0.1mA VIN1 = VIL, VSTBY = VIH, VOL1 OUT1 - - 0.1 C1,C2 = 0.01μF, IOUT1 = +0.1mA Low level output voltage V VIN2 = VIH, VSTBY = VIH, VOL2 OUT2 - 0.5 1.3 C1,C2 = 0.01μF, IOUT2 = +0.1A Diagnosis output leakage I current DIAGH DIAG VIN1=VIL, VDIAG=5V - - 1 μA Diagnosis output voltage VDIAGL DIAG VSTBY = VIH, IDIAG = 500μA - 0.22 0.40 V CP1, Charge pump frequency fOSC V CP2 STBY = VIH 30 55 80 kHz Charge pump under voltage V V VDD V DD DD V detection voltage CPL CPV +4.0 +4.7 +5.4 VIN1 = VIH, VSTBY = VIH Charge pump under voltage ΔVCPL CPV 0.25 0.50 1.00 V Hysteresis RONH OUT1 VIN1 = VIH, VSTBY = VIH,IOUT1 = -5mA - 16 40 Output driver on resistance RONL1 OUT1 VIN1 = VIL, VSTBY = VIH,IOUT1 = +5mA - 630 800 Ω RONL2 OUT2 VIN2 = VIH, VSTBY = VIH,IOUT2 = +0.1A - 5 13 （Continued on next page） © 2 019 9 2020-01-16 Toshiba Electronic Devices & Storage Corporation
Operating supply voltage VDD Tj = -40 to 150°C 4.5 12.0 27.0 V
10. Electrical Characteristics Table 10.1 Electrical Characteristics
(Unless otherwise specified, Tj = -40 to 150°C, VDD = 4.5 to 27.0V)
Characteristics Symbol Pin Test Condition Min Typ. Max Unit
IDD(1) VDD VDD = 12V, VSTBY = VIL, Tj = 25°C - - 5.0 μA I Supply current DD(2) VDD VIN1,2 = VIL, VSTBY = VIH, C1,C2 = 0.01μF - 3.2 6.0 mA VIN1 = VIH, VSTBY = VIH, C1,C2 = 0.01μF, IDD(3) VDD - - 6.0 mA OUT1,OUT2 = open. High level input voltage VIH IN1,IN2, - 2.0 - - V STBY Low level input voltage VIL - - - 0.8 IIH IN1,IN2, VIN = 5V, Note1 - 50 100 Input current μA STBY IIL VIN = 0V -1 - 1 V V V DD = 18 to 27V, C1,C2 = 0.01μF, DD OH1 OUT1 - 40.0 VIN1 = VIH, VSTBY = VIH, IOUT1 = -0.1mA +7.0 V V V V High level output voltage V DD = 8 to 18V, C1,C2 = 0.01μF, DD DD DD OH2 OUT1 V VIN1 = VIH, VSTBY = VIH, IOUT1 = -0.1mA +10.0 +12.0 +14.0 V V V V V DD = 4.5 to 8V, VIN1 = VIH, DD DD DD OH3 OUT1 VSTBY = VIH, IOUT1 = -0.1mA +5.4 +7.0 +14.0 VIN1 = VIH, VSTBY = VIH, Output clamp voltage VOCL OUT1 34 37 40 V C1,C2 = 0.01μF, IOUT1 = +0.1mA VIN1 = VIL, VSTBY = VIH, VOL1 OUT1 - - 0.1 C1,C2 = 0.01μF, IOUT1 = +0.1mA Low level output voltage V VIN2 = VIH, VSTBY = VIH, VOL2 OUT2 - 0.5 1.3 C1,C2 = 0.01μF, IOUT2 = +0.1A Diagnosis output leakage I current DIAGH DIAG VIN1=VIL, VDIAG=5V - - 1 μA Diagnosis output voltage VDIAGL DIAG VSTBY = VIH, IDIAG = 500μA - 0.22 0.40 V CP1, Charge pump frequency fOSC V CP2 STBY = VIH 30 55 80 kHz Charge pump under voltage V V VDD V DD DD V detection voltage CPL CPV +4.0 +4.7 +5.4 VIN1 = VIH, VSTBY = VIH Charge pump under voltage ΔVCPL CPV 0.25 0.50 1.00 V Hysteresis RONH OUT1 VIN1 = VIH, VSTBY = VIH,IOUT1 = -5mA - 16 40 Output driver on resistance RONL1 OUT1 VIN1 = VIL, VSTBY = VIH,IOUT1 = +5mA - 630 800 Ω RONL2 OUT2 VIN2 = VIH, VSTBY = VIH,IOUT2 = +0.1A - 5 13 （Continued on next page） © 2 019 9 2020-01-16 Toshiba Electronic Devices & Storage Corporation