Datasheet IRF9Z24N (International Rectifier) - 6
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 9 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 文件格式/大小 | PDF / 117 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
该数据表的模型线
文件文字版本
IRF9Z24N L 250 V ) D S J ID m TO P -2. 9A ( y -5.1 A g R G D .U .T B OTTO M -7.2 A V 200 D D ner IA S A E D R IV E R - 20V he t 0 .0 1Ω p 150 lanc a v e A ls 100 u 15V P le g in
Fig 12a.
Unclamped Inductive Test Circuit 50 S , AS E 0 A I 25 50 75 100 125 150 175 AS Sta rtin g TJ , Junction Temperature (°C)
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V .3µF -10V - Q V GS QGD D.U.T. + DS VGS VG -3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 12a.
Unclamped Inductive Test Circuit 50 S , AS E 0 A I 25 50 75 100 125 150 175 AS Sta rtin g TJ , Junction Temperature (°C)
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V .3µF -10V - Q V GS QGD D.U.T. + DS VGS VG -3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit