Datasheet IRLZ34N (International Rectifier) - 6
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 0.035 Ω, ID = 30 A, TO-220AB |
| 页数 / 页 | 9 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 文件格式/大小 | PDF / 112 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
文件文字版本
IRLZ34N L 250 ) V I D DS J m TOP 6 .6A ( D.U.T. y 11A g 200 BO TTOM 16 A RG + ner VDD E - he 5.0 V I 150 AS lanc t a p v 0.01Ω e A ls 100
Fig 12a.
Unclamped Inductive Test Circuit u P le g in 50 S , AS E V = 2 5V D D V 0 A (BR)DSS 25 50 75 100 125 150 175 tp Startin g J T , Jun ctio n T emp era tu re (°C) VDD
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current VDS IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + 5.0 V VDS Q D.U.T. - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 12a.
Unclamped Inductive Test Circuit u P le g in 50 S , AS E V = 2 5V D D V 0 A (BR)DSS 25 50 75 100 125 150 175 tp Startin g J T , Jun ctio n T emp era tu re (°C) VDD
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current VDS IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + 5.0 V VDS Q D.U.T. - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit