Datasheet IRFZ46N (International Rectifier) - 3
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 16.5 mΩ, ID = 30 A, TO-220AB |
| 页数 / 页 | 9 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| 文件格式/大小 | PDF / 116 Kb |
| 文件语言 | 英语 |
Fig 1. Fig 2. Fig 3. Fig 4
该数据表的模型线
文件文字版本
IRFZ46N 1000 1000 VGS VGS TOP 15V ) TOP 15V 10V ) 10V 8.0V A 8.0V t (A 7.0V 7.0V n t ( 6.0V 6.0V n 5.5V 5.5V rre 5.0V 5.0V u rre BOTTOM4.5V BOTTOM4.5V u C 100 100 e C e rc u rc o u o -S -S -to -to 4.5V in in 10 ra 10 ra 4.5V I , D D I , D D 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25 C ° T = 175 J C ° 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 3.0 e ID = 53A ) c n ta t (A n is 2.5 T = 25 C s J ° e rre u R n C 100 2.0 e T = 175 C O rc J ° e ed) u rc o u liz o a 1.5 -S -S m -to or in -to (N 10 in ra 1.0 ra I , D D 0.5 (on) V = DS 25V S , DD 20µs PULSE WIDTH R V = GS 10V 1 0.0 4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C ° ) GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 3.0 e ID = 53A ) c n ta t (A n is 2.5 T = 25 C s J ° e rre u R n C 100 2.0 e T = 175 C O rc J ° e ed) u rc o u liz o a 1.5 -S -S m -to or in -to (N 10 in ra 1.0 ra I , D D 0.5 (on) V = DS 25V S , DD 20µs PULSE WIDTH R V = GS 10V 1 0.0 4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C ° ) GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3